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Electrical and photovoltaic properties of ZnO/Si heterostructures with ZnO films grown by atomic layer deposition

Author
PIETRUSZKA, R1 ; LUKA, G1 ; WITKOWSKI, B. S1 ; KOPALKO, K1 ; ZIELONY, E2 ; BIEGANSKI, P2 ; PLACZEK-POPKO, E2 ; GODLEWSKI, M1 3
[1] Institute of Physics, Polish Academy of Sciences, Warsaw, Poland
[2] Institute of Physics, Wroclaw University of Technology, Wroclaw, Poland
[3] Department of Mathematics and Natural Sciences College of Science, Cardinal Stefan Wyszynski University, Warsaw, Poland
Conference title
European Materials Research Society (E-MRS) Spring Meeting 2013 Symposium H: Multifunctional Binary and Complex Oxide Films and Nanostructures for Microelectronic Applications
Conference name
European Materials Research Society (E-MRS) Spring Meeting 2013. Symposium H: Multifunctional Binary and Complex Oxide Films and Nanostructures for Microelectronic Applications (E-MRS) Spring Meeting 2013. Symposium H: Multifunctional Binary and Complex Oxide Films and Nanostructures for Microelectronic Applications (Strasbourg 2013-05-27)
Author (monograph)
WALCZYK, Christian (Editor)1 ; DUBOURDIEU, Catherine (Editor)2 ; FIEBIG, Manfred (Editor)3 ; PRELLIER, Wilfrid (Editor)4 ; IONESCU, Mihai Adrian (Editor)5
European Materials Research Society (E-MRS), Strasbourg, France (Organiser of meeting)
[1] IHP, Frankfurt (Oder), Germany
[2] CNRS, Institut des Nanotechnologies de Lyon, Lyon, Ecully, France
[3] Materials Department, ETH Eurich, Zurich, Switzerland
[4] Laboratoire CRISMAT, CNRS UMR 6508, ENSICAEN, Caen, France
[5] EPFL Lausanne, Lausanne, Switzerland
Source

Thin solid films. 2014, Vol 563, pp 28-31, 4 p ; ref : 23 ref

CODEN
THSFAP
ISSN
0040-6090
Scientific domain
Crystallography; Metallurgy, welding; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Author keyword
Atomic layer deposition Heterojunction Silicon Solar cells Zinc oxide
Keyword (fr)
Addition aluminium Cellule solaire Couche mince Croissance cristalline en phase vapeur Dispositif photovoltaïque Effet dimensionnel Epaisseur couche Hétérojonction Hétérostructure Méthode couche atomique Oxyde de zinc Propriété électrique Silicium 6855J 7350 8115K 8460J Substrat silicium ZnO
Keyword (en)
Aluminium additions Solar cells Thin films Crystal growth from vapors Photovoltaic cell Size effect Layer thickness Heterojunctions Heterostructures Atomic layer method Zinc oxide Electrical properties Silicon
Keyword (es)
Dispositivo fotovoltaico Espesor capa Método capa atómica Zinc óxido
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness

Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C50 Electronic transport phenomena in thin films and low-dimensional structures

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D06 Energy / 001D06C Natural energy / 001D06C02 Solar energy / 001D06C02D Photovoltaic conversion / 001D06C02D1 Solar cells. Photoelectrochemical cells

Discipline
Energy Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
28575058

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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