Reduction of Dislocation Density in HVPE-Grown GaN Epilayers by Using In Situ-Etched Porous Templates
- Author
- ZHAO, Z. D1 ; WANG, B1 ; SUI, Y. P1 ; XU, W1 ; LI, X. L1 ; YU, G. H1
[1] State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China - Source
Journal of electronic materials. 2014, Vol 43, Num 3, pp 786-790, 5 p ; ref : 14 ref
- CODEN
- JECMA5
- ISSN
- 0361-5235
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Springer, Heidelberg
- Publication country
- Germany
- Document type
- Article
- Language
- English
- Author keyword
- GaN HVPE hydrogen etching porous template
- Keyword (fr)
- Composé III-V Couche mince Couche tampon Couche épitaxique Densité dislocation Dislocation Epitaxie phase vapeur Gravure Haute température Hydrure Matériau poreux Mécanisme croissance Méthode MOCVD Optimisation Perfection cristalline Réaction dirigée Semiconducteur III-V 6172L 8105R 8115G 8115K GaN Méthode template Substrat GaN Substrat saphir
- Keyword (en)
- III-V compound Thin films Buffer layer Epitaxial layers Dislocation density Dislocations VPE Etching High temperature Hydrides Porous materials Growth mechanism MOCVD Optimization Crystal perfection Template reaction III-V semiconductors Template method
- Keyword (es)
- Compuesto III-V Capa tampón Alta temperatura Mecanismo crecimiento Perfección cristalina Reacción dirigida
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72L Linear defects: dislocations, disclinations
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05R Porous materials; granular materials
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 28583147
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/s11664-013-2920-5 
https://dx.doi.org/10.1007/s11664-013-2920-5
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s11664-013-2920-5\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:101:\"Reduction of Dislocation Density in HVPE-Grown GaN Epilayers by Using In Situ-Etched Porous Templates\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Journal of electronic materials\";s:9:\"\u0000*\u0000stitle\";s:18:\"J. electron. mater\";s:7:\"\u0000*\u0000date\";s:4:\"2014\";s:9:\"\u0000*\u0000volume\";s:2:\"43\";s:8:\"\u0000*\u0000issue\";s:1:\"3\";s:8:\"\u0000*\u0000spage\";s:3:\"786\";s:8:\"\u0000*\u0000epage\";s:3:\"790\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0361-5235\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"ZHAO\";s:10:\"\u0000*\u0000aufirst\";s:4:\"Z. D\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:7:\"WANG, B\";i:1;s:9:\"SUI, Y. P\";i:2;s:5:\"XU, W\";i:3;s:8:\"LI, X. L\";i:4;s:8:\"YU, G. H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JECMA5\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:101:\"Reduction of Dislocation Density in HVPE-Grown GaN Epilayers by Using In Situ-Etched Porous Templates\";s:8:\"\u0000*\u0000place\";s:10:\"Heidelberg\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"5\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s11664-013-2920-5\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:101:\"Reduction of Dislocation Density in HVPE-Grown GaN Epilayers by Using In Situ-Etched Porous Templates\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Journal of electronic materials\";s:9:\"\u0000*\u0000stitle\";s:18:\"J. electron. mater\";s:7:\"\u0000*\u0000date\";s:4:\"2014\";s:9:\"\u0000*\u0000volume\";s:2:\"43\";s:8:\"\u0000*\u0000issue\";s:1:\"3\";s:8:\"\u0000*\u0000spage\";s:3:\"786\";s:8:\"\u0000*\u0000epage\";s:3:\"790\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0361-5235\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"ZHAO\";s:10:\"\u0000*\u0000aufirst\";s:4:\"Z. D\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:7:\"WANG, B\";i:1;s:9:\"SUI, Y. P\";i:2;s:5:\"XU, W\";i:3;s:8:\"LI, X. L\";i:4;s:8:\"YU, G. H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JECMA5\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:101:\"Reduction of Dislocation Density in HVPE-Grown GaN Epilayers by Using In Situ-Etched Porous Templates\";s:8:\"\u0000*\u0000place\";s:10:\"Heidelberg\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"5\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s11664-013-2920-5\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s11664-013-2920-5\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:101:\"Reduction of Dislocation Density in HVPE-Grown GaN Epilayers by Using In Situ-Etched Porous Templates\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Journal of electronic materials\";s:9:\"\u0000*\u0000stitle\";s:18:\"J. electron. mater\";s:7:\"\u0000*\u0000date\";s:4:\"2014\";s:9:\"\u0000*\u0000volume\";s:2:\"43\";s:8:\"\u0000*\u0000issue\";s:1:\"3\";s:8:\"\u0000*\u0000spage\";s:3:\"786\";s:8:\"\u0000*\u0000epage\";s:3:\"790\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0361-5235\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"ZHAO\";s:10:\"\u0000*\u0000aufirst\";s:4:\"Z. D\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:7:\"WANG, B\";i:1;s:9:\"SUI, Y. P\";i:2;s:5:\"XU, W\";i:3;s:8:\"LI, X. L\";i:4;s:8:\"YU, G. H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JECMA5\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:101:\"Reduction of Dislocation Density in HVPE-Grown GaN Epilayers by Using In Situ-Etched Porous Templates\";s:8:\"\u0000*\u0000place\";s:10:\"Heidelberg\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"5\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s11664-013-2920-5\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:101:\"Reduction of Dislocation Density in HVPE-Grown GaN Epilayers by Using In Situ-Etched Porous Templates\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Journal of electronic materials\";s:9:\"\u0000*\u0000stitle\";s:18:\"J. electron. mater\";s:7:\"\u0000*\u0000date\";s:4:\"2014\";s:9:\"\u0000*\u0000volume\";s:2:\"43\";s:8:\"\u0000*\u0000issue\";s:1:\"3\";s:8:\"\u0000*\u0000spage\";s:3:\"786\";s:8:\"\u0000*\u0000epage\";s:3:\"790\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0361-5235\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"ZHAO\";s:10:\"\u0000*\u0000aufirst\";s:4:\"Z. D\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:7:\"WANG, B\";i:1;s:9:\"SUI, Y. P\";i:2;s:5:\"XU, W\";i:3;s:8:\"LI, X. L\";i:4;s:8:\"YU, G. H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JECMA5\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:101:\"Reduction of Dislocation Density in HVPE-Grown GaN Epilayers by Using In Situ-Etched Porous Templates\";s:8:\"\u0000*\u0000place\";s:10:\"Heidelberg\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"5\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1007\/s11664-013-2920-5\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:101:\"Reduction of Dislocation Density in HVPE-Grown GaN Epilayers by Using In Situ-Etched Porous Templates\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Journal of electronic materials\";s:9:\"\u0000*\u0000stitle\";s:18:\"J. electron. mater\";s:7:\"\u0000*\u0000date\";s:4:\"2014\";s:9:\"\u0000*\u0000volume\";s:2:\"43\";s:8:\"\u0000*\u0000issue\";s:1:\"3\";s:8:\"\u0000*\u0000spage\";s:3:\"786\";s:8:\"\u0000*\u0000epage\";s:3:\"790\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0361-5235\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"ZHAO\";s:10:\"\u0000*\u0000aufirst\";s:4:\"Z. D\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:7:\"WANG, B\";i:1;s:9:\"SUI, Y. P\";i:2;s:5:\"XU, W\";i:3;s:8:\"LI, X. L\";i:4;s:8:\"YU, G. H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JECMA5\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:101:\"Reduction of Dislocation Density in HVPE-Grown GaN Epilayers by Using In Situ-Etched Porous Templates\";s:8:\"\u0000*\u0000place\";s:10:\"Heidelberg\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"5\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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