Graphene/MoS₂ Hybrid Technology for Large-Scale Two-Dimensional Electronics

Author

LILI YU¹ ; LEE, Yi-Hsien² ; PALACIOS, Tomás¹ ; XI LING¹ ; SANTOS, Elton J. G³ ; YONG CHEOL SHIN⁴ ; YUXUAN LIN¹ ; DUBEY, Madan⁵ ; KAXIRAS, Efthimios^{3 6} ; JING KONG¹ ; HAN WANG¹
[1] Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
[2] Materials Science and Engineering, National Tsing-Hua University, Hsinchu, 30013, Taiwan, Province of China
[3] School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
[4] Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
[5] United States Army Research Laboratory, 2800 Powder Mill Road, Adelphi, Maryland 20783-1197, United States
[6] Department of Physics, Harvard University, Cambridge, Massachusetts 02138, United States

Source

Nano letters (Print). 2014, Vol 14, Num 6, pp 3055-3063, 9 p ; ref : 54 ref

ISSN

1530-6984

Scientific domain

General chemistry, physical chemistry; Crystallography; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics

Publisher

American Chemical Society, Washington, DC

Publication country

United States

Document type

Article

Language

English

Keyword (fr)

Barrière Schottky Canal transistor Circuit ET Contact ohmique Dopage Dépôt chimique phase vapeur Electrostatique Etude théorique Flexibilité Graphène Hauteur barrière Hétérojonction Hétérostructure Matériau transparent Métal transition Méthode fonctionnelle densité Nitrure de bore Propriété transport Système optique Travail sortie 7115M 8105T 8105U 8115G BN MoS2 Substrat Molybdène Substrat graphène

Keyword (en)

Schottky barriers Transistor channel AND circuit Ohmic contacts Doping CVD Electrostatics Theoretical study Flexibility Graphene Barrier height Heterojunctions Heterostructures Transparent material Transition elements Density functional method Boron nitride Transport properties Optical systems Work functions

Keyword (es)

Canal transistor Circuito Y Doping Graphene Material transparente Boro nitruro Propiedad transporte

Classification

Pascal

001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A15 Methods of electronic structure calculations

Pascal

001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C30 Surface double layers, schottky barriers, and work functions

Pascal

001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05T Fullerenes and related materials; diamonds, graphite

Pascal

001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)

Discipline

Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties

Origin

Inist-CNRS

Database

PASCAL

INIST identifier

28606811

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS