Influence of process parameters on atomic layer deposition of ZrO2 thin films from CpZr(NMe2)3 and H2O
- Author
- AARIK, Lauri1 ; ALLES, Harry1 ; AARIK, Jaan1 ; AIDLA, Aleks1 ; KAHRO, Tauno1 ; KUKLI, Kaupo1 2 ; NIINISTÖ, Jaakko2 ; MÄNDAR, Hugo1 ; TAMM, Aile1 ; RAMMULA, Raul1 ; SAMMELSELG, Väino1 3
[1] University of Tartu, Institute of Physics, Ravila 14C, 50411 Tartu, Estonia
[2] University of Helsinki, Department of Chemistry, P.O. Box 55, 00014 Helsinki, Finland
[3] University of Tartu, Institute of Chemistry, Ravila 14A, 50411 Tartu, Estonia - Source
Thin solid films. 2014, Vol 565, pp 37-44, 8 p ; ref : 41 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- Atomic layer deposition Crystal structure Cyclopentadienyl Density Refractive index Zirconium oxide
- Keyword (fr)
- Carbone Composition phase Couche mince Croissance cristalline en phase vapeur Dépendance température Effet température Epaisseur couche Indice réfraction Mécanisme croissance Méthode couche atomique Nucléation Oxyde de zirconium Procédé dépôt Propriété optique Réseau monoclinique Réseau quadratique Structure cristalline Taux croissance Temps réel 6855A 6855J 6855N 8115K Substrat graphène Substrat silicium ZrO2
- Keyword (en)
- Carbon Phase composition Thin films Crystal growth from vapors Temperature dependence Temperature effects Layer thickness Refractive index Growth mechanism Atomic layer method Nucleation Zirconium oxide Deposition process Optical properties Monoclinic lattices Tetragonal lattices Crystal structure Growth rate Real time
- Keyword (es)
- Composición fase Espesor capa Mecanismo crecimiento Método capa atómica Zirconio óxido Procedimiento revestimiento Tiempo real
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55N Composition and phase identification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15A Theory and models of film growth
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 28697398
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2014.06.052 
https://dx.doi.org/10.1016/j.tsf.2014.06.052
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