InGaAs/GaAs quantum well lasers grown on exact GaP/Si (001)
- Author
- XUE HUANG1 ; YUNCHENG SONG1 ; MASUDA, Taizo1 ; DAEHWAN JUNG1 ; MINJOO LEE1
[1] Department of Electrical Engineering, Yale University, New Haven, CT, United States - Source
Electronics letters. 2014, Vol 50, Num 17, pp 1226-1227, 2 p ; ref : 7 ref
- CODEN
- ELLEAK
- ISSN
- 0013-5194
- Scientific domain
- Electronics; Optics; Telecommunications
- Publisher
- Institution of Engineering and Technology, Stevenage
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Arséniure d'indium Arséniure de gallium Densité courant Longueur onde Puits quantique contraint Seuil Température ambiante Laser puits quantique Semiconducteur III-V
- Keyword (en)
- Indium arsenides Gallium arsenides Current density Wavelengths Strained quantum well Threshold Ambient temperature Quantum well lasers III-V semiconductors
- Keyword (es)
- Pozo cuántico forzado Umbral Láser de punto cuántico Semiconductor III-V
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B55 Lasers / 001B40B55P Semiconductor lasers; laser diodes
- Discipline
- Physics : optics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 28721983
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1049/el.2014.2077 
https://dx.doi.org/10.1049/el.2014.2077
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