Thermodynamic study of β-Ga2O3 growth by halide vapor phase epitaxy
- Author
- NOMURA, Kazushiro1 ; GOTO, Ken2 ; TOGASHI, Rie1 ; MURAKAMI, Hisashi1 ; KUMAGAI, Yoshinao1 ; KURAMATA, Akito2 ; YAMAKOSHI, Shigenobu2 ; KOUKITU, Akinori1
[1] Department of Applied Chemistry, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588, Japan
[2] Tamura Corporation, 2-3-1 Hirosedai, Sayama, Saitama 350-1328, Japan - Source
Journal of crystal growth. 2014, Vol 405, pp 19-22, 4 p ; ref : 22 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- A1. Thermodynamic analysis A3. Halide vapor phase epitaxy B1. Gallium compounds B1. Oxides B2. Semiconducting III-VI materials
- Keyword (fr)
- Analyse thermodynamique Composé du gallium Epitaxie phase vapeur Halogénure Homoépitaxie Mécanisme croissance Précurseur Résultat expérimental Semiconducteur III-VI 8110A 8115K Ga2O3 GaCl
- Keyword (en)
- Thermodynamic analysis Gallium compounds VPE Halides Homoepitaxy Growth mechanism Precursor Experimental result III-VI semiconductors
- Keyword (es)
- Análisis termodinámico Homoepitaxia Mecanismo crecimiento Resultado experimental
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 28785327
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2014.06.051 
https://dx.doi.org/10.1016/j.jcrysgro.2014.06.051
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