Tunable Transport Gap in Phosphorene
- Author
- DAS, Saptarshi1 ; WEI ZHANG2 ; DEMARTEAU, Marcel3 ; HOFFMANN, Axel2 ; DUBEY, Madan4 ; ROELOFS, Andreas1
[1] Center for Nanoscale Material, Argonne National Laboratory, Argonne, Illinois 60439, United States
[2] Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, United States
[3] Division of High Energy Physics, Argonne National Laboratory, Argonne, Illinois 60439, United States
[4] US Army Research Laboratory, Adelphi, Maryland 20783, United States - Source
Nano letters (Print). 2014, Vol 14, Num 10, pp 5733-5739, 7 p ; ref : 24 ref
- Publisher
- American Chemical Society, Washington, DC
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Asymétrie Barrière Schottky Couche monomoléculaire Densité porteur charge Dépendance température Epaisseur couche Hauteur barrière Loi échelle Mobilité trou Modèle mathématique Niveau Fermi Oxyde grille Structure bande Structure électronique Transistor effet champ 7322 8530P 8530T
- Keyword (en)
- Asymmetry Schottky barrier Monolayer Charge carrier density Temperature dependence Layer thickness Barrier height Scaling law Hole mobility Mathematical model Fermi level Gate oxide Band structure Electronic structure Field effect transistor
- Keyword (es)
- Asimetría Barrera Schottky Capa monomolecular Concentración portador carga Espesor capa Altura barrera Ley escala Movilidad agujero Modelo matemático Nivel Fermi Oxido rejilla Estructura banda Estructura electrónica Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C22 Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 28986412
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1021/nl5025535 
https://dx.doi.org/10.1021/nl5025535
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