Comparative studies of photoluminescence from n and p δ doping wells in GaAs
- Author
- ENDERLEIN, R; SIPAHI, G. M; SCOLFARO, L. M. R; LEITE, J. R; DIAZ, I. F. L
Univ. São Paulo, inst. física, 01452-990 São Paulo, Brazil - Conference title
- International conference on low dimensional structures and devices
- Conference name
- International conference on low dimensional structures and devices (1 ; Singapore 1995-05-08)
- Author (monograph)
- HENINI, Mohamed (Editor)1 ; SZWEDA, Roy (Editor)
[1] Univ. Nottingham ; dep. physics, Nottingham NG7 2RD, United Kingdom - Source
Materials science & engineering. B, Solid-state materials for advanced technology. 1995, Vol 35, Num 1-3, pp 396-400 ; ref : 6 ref
- ISSN
- 0921-5107
- Scientific domain
- Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Dopage Electron Etude théorique Gallium arséniure Luminescence Modèle masse effective Photoluminescence Propriété optique Semiconducteur III-V Semiconducteur Trou
- Keyword (en)
- Doping Electrons Theoretical study Gallium arsenides Luminescence Effective mass model Photoluminescence Optical properties III-V semiconductors Semiconductor materials Holes
- Keyword (es)
- Doping Modelo masa efectiva Semiconductor(material)
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H55 Photoluminescence / 001B70H55C Iii-v semiconductors
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2960674
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0921-5107(95)01330-X 
https://dx.doi.org/10.1016/0921-5107(95)01330-X
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