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Paramagnetic defect centers in BESOI and SIMOX buried oxides

Author
WARREN, W. L1 ; SHANEYFELT, M. R1 ; SCHWANK, J. R1 ; FLEETWOOD, D. M1 ; WINOKUR, P. S1 ; DEVINE, R. A. B; MASZARA, W.P; MCKITTERICK, J.B
[1] Sandia National Laboratories, Albuquerque NM 87185-5800, United States
Conference title
NSREC'93 : IEEE international nuclear and space radiation effects conference
Conference name
NSREC'93 : IEEE international nuclear and space radiation effects conference (30 ; Snowbird UT 1993-07-19)
Author (monograph)
BUEHLER, MARTIN (Editor)
IEEE. Nuclear and Plasma Sciences Society. Radiation Effects Communittee, United States (Funder/Sponsor)
California inst. technology, jet propulsion lab., Pasadena CA 91109, United States
Source

IEEE transactions on nuclear science. 1993, Vol 40, Num 6, pp 1755-1764 ; ref : 33 ref

CODEN
IETNAE
ISSN
0018-9499
Scientific domain
Energy
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Conference Paper
Language
English
Keyword (fr)
Caractéristique capacité tension Centre paramagnétique Défaut Fabrication microélectronique Méthode analyse Méthode mesure Résonance paramagnétique électronique Silicium Oxyde Technologie silicium sur isolant Technologie SIMOX
Keyword (en)
Voltage capacity curve Paramagnetic center Defect Microelectronic fabrication Analysis method Measurement method Electron paramagnetic resonance Silicon Oxides Silicon on insulator technology SIMOX technology
Keyword (es)
Característica capacidad tensión Centro paramagnético Defecto Fabricación microeléctrica Método análisis Método medida Resonancia paramagnética electrónica Silicio Óxido Tecnología silicio sobre aislante
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
3320645

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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