Surface photovoltage and deep level transient spectrocopy measurement of the Fe impurities in front-end operations of the IC CMOS process
- Author
- NAUKA, K; GOMEZ, D. A
Hewlett-Packard Co., Palo Alto CA 94304, United States - Source
Journal of the Electrochemical Society. 1995, Vol 142, Num 6, pp L98-L99 ; ref : 8 ref
- CODEN
- JESOAN
- ISSN
- 0013-4651
- Scientific domain
- General chemistry, physical chemistry; Crystallography; Electrical engineering; Condensed state physics
- Publisher
- Electrochemical Society, Pennington, NJ
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Etude expérimentale Spectrométrie transitoire niveau profond Circuit intégré Contamination Effet photovoltaïque Fabrication microélectronique Fer Monitorage Particule métallique Pastille électronique Potentiel surface Technologie MOS complémentaire
- Keyword (en)
- Experimental study Deep level transient spectrometry
- Keyword (es)
- Estudio experimental Espectrometría transitoria nivel profundo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3569306
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1149/1.2044258 
https://dx.doi.org/10.1149/1.2044258
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