Temperature-independent output voltage generated by threshold voltage of an NMOS transistor
- Author
- MANKU, T1 ; WANG, Y
[1] Tech. univ. Nova Scotia, Halifax NS B3J 2X4, Canada - Source
Electronics Letters. 1995, Vol 31, Num 12, pp 935-936 ; ref : 4 ref
- CODEN
- ELLEAK
- ISSN
- 0013-5194
- Scientific domain
- Electronics; Optics; Telecommunications
- Publisher
- Institution of Electrical Engineers, London
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Canal n Caractéristique fonctionnement Circuit MOS Commande tension Référence tension Seuil tension Technologie MOS complémentaire Transistor MOS
- Keyword (en)
- n channel Performance characteristic MOS circuit Voltage control Voltage standard Voltage threshold Complementary MOS technology MOSFET devices
- Keyword (es)
- Canal n Característica funcionamiento Circuito MOS Estandar voltaje Umbral tensión Tecnología MOS complementario
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03G Electric, optical and optoelectronic circuits / 001D03G02 Circuit properties / 001D03G02A Electronic circuits / 001D03G02A8 Analog circuits
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3605161
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1049/el:19950647 
https://dx.doi.org/10.1049/el:19950647
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