TEM investigation of iron disilicide films on Si(001) grown by molecular beam epitaxy
- Author
- NISSEN, H.-U; MÜLLER, E; DELLER, H. R; VON KÄNEL, H
ETH Zürich, Lab. Festkörperphysik, 8093 Zürich, Switzerland - Source
Physica status solidi. A. Applied research. 1995, Vol 150, Num 1, pp 395-406 ; ref : 27 ref
- CODEN
- PSSABA
- ISSN
- 0031-8965
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Wiley-VCH, Berlin
- Publication country
- Germany
- Document type
- Article
- Language
- English
- Keyword (fr)
- Composé binaire Couche mince Croissance cristalline en phase vapeur Epaisseur Epitaxie jet moléculaire Etude expérimentale Fer siliciure Mécanisme croissance Relation orientation Structure îlot TEM Fe Si FeSi2 Composé minéral Métal transition composé
- Keyword (en)
- Binary compounds Thin films Crystal growth from vapors Thickness Molecular beam epitaxy Experimental study Iron silicides Growth mechanism Orientation relation Island structure TEM Inorganic compounds Transition element compounds
- Keyword (es)
- Mecanismo crecimiento Relación orientación
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3646817
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1002/pssa.2211500135 
https://dx.doi.org/10.1002/pssa.2211500135
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:23:\"10.1002\/pssa.2211500135\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:85:\"TEM investigation of iron disilicide films on Si(001) grown by molecular beam epitaxy\";s:9:\"\u0000*\u0000jtitle\";s:42:\"Physica status solidi. A. Applied research\";s:9:\"\u0000*\u0000stitle\";s:33:\"Phys. status solidi, A, Appl. res\";s:7:\"\u0000*\u0000date\";s:4:\"1995\";s:9:\"\u0000*\u0000volume\";s:3:\"150\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:3:\"395\";s:8:\"\u0000*\u0000epage\";s:3:\"406\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0031-8965\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"NISSEN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"H.-U\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:10:\"M\u00dcLLER, E\";i:1;s:12:\"DELLER, H. R\";i:2;s:13:\"VON K\u00c4NEL, H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"PSSABA\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:85:\"TEM investigation of iron disilicide films on Si(001) grown by molecular beam epitaxy\";s:8:\"\u0000*\u0000place\";s:6:\"Berlin\";s:6:\"\u0000*\u0000pub\";s:9:\"Wiley-VCH\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:23:\"10.1002\/pssa.2211500135\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:85:\"TEM investigation of iron disilicide films on Si(001) grown by molecular beam epitaxy\";s:9:\"\u0000*\u0000jtitle\";s:42:\"Physica status solidi. A. Applied research\";s:9:\"\u0000*\u0000stitle\";s:33:\"Phys. status solidi, A, Appl. res\";s:7:\"\u0000*\u0000date\";s:4:\"1995\";s:9:\"\u0000*\u0000volume\";s:3:\"150\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:3:\"395\";s:8:\"\u0000*\u0000epage\";s:3:\"406\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0031-8965\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"NISSEN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"H.-U\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:10:\"M\u00dcLLER, E\";i:1;s:12:\"DELLER, H. R\";i:2;s:13:\"VON K\u00c4NEL, H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"PSSABA\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:85:\"TEM investigation of iron disilicide films on Si(001) grown by molecular beam epitaxy\";s:8:\"\u0000*\u0000place\";s:6:\"Berlin\";s:6:\"\u0000*\u0000pub\";s:9:\"Wiley-VCH\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:23:\"10.1002\/pssa.2211500135\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:23:\"10.1002\/pssa.2211500135\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:85:\"TEM investigation of iron disilicide films on Si(001) grown by molecular beam epitaxy\";s:9:\"\u0000*\u0000jtitle\";s:42:\"Physica status solidi. A. Applied research\";s:9:\"\u0000*\u0000stitle\";s:33:\"Phys. status solidi, A, Appl. res\";s:7:\"\u0000*\u0000date\";s:4:\"1995\";s:9:\"\u0000*\u0000volume\";s:3:\"150\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:3:\"395\";s:8:\"\u0000*\u0000epage\";s:3:\"406\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0031-8965\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"NISSEN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"H.-U\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:10:\"M\u00dcLLER, E\";i:1;s:12:\"DELLER, H. R\";i:2;s:13:\"VON K\u00c4NEL, H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"PSSABA\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:85:\"TEM investigation of iron disilicide films on Si(001) grown by molecular beam epitaxy\";s:8:\"\u0000*\u0000place\";s:6:\"Berlin\";s:6:\"\u0000*\u0000pub\";s:9:\"Wiley-VCH\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:23:\"10.1002\/pssa.2211500135\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:85:\"TEM investigation of iron disilicide films on Si(001) grown by molecular beam epitaxy\";s:9:\"\u0000*\u0000jtitle\";s:42:\"Physica status solidi. A. Applied research\";s:9:\"\u0000*\u0000stitle\";s:33:\"Phys. status solidi, A, Appl. res\";s:7:\"\u0000*\u0000date\";s:4:\"1995\";s:9:\"\u0000*\u0000volume\";s:3:\"150\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:3:\"395\";s:8:\"\u0000*\u0000epage\";s:3:\"406\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0031-8965\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"NISSEN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"H.-U\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:10:\"M\u00dcLLER, E\";i:1;s:12:\"DELLER, H. R\";i:2;s:13:\"VON K\u00c4NEL, H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"PSSABA\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:85:\"TEM investigation of iron disilicide films on Si(001) grown by molecular beam epitaxy\";s:8:\"\u0000*\u0000place\";s:6:\"Berlin\";s:6:\"\u0000*\u0000pub\";s:9:\"Wiley-VCH\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:23:\"10.1002\/pssa.2211500135\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:85:\"TEM investigation of iron disilicide films on Si(001) grown by molecular beam epitaxy\";s:9:\"\u0000*\u0000jtitle\";s:42:\"Physica status solidi. A. Applied research\";s:9:\"\u0000*\u0000stitle\";s:33:\"Phys. status solidi, A, Appl. res\";s:7:\"\u0000*\u0000date\";s:4:\"1995\";s:9:\"\u0000*\u0000volume\";s:3:\"150\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:3:\"395\";s:8:\"\u0000*\u0000epage\";s:3:\"406\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0031-8965\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"NISSEN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"H.-U\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:10:\"M\u00dcLLER, E\";i:1;s:12:\"DELLER, H. R\";i:2;s:13:\"VON K\u00c4NEL, H\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"PSSABA\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:85:\"TEM investigation of iron disilicide films on Si(001) grown by molecular beam epitaxy\";s:8:\"\u0000*\u0000place\";s:6:\"Berlin\";s:6:\"\u0000*\u0000pub\";s:9:\"Wiley-VCH\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
