Strong luminescence intensities in Al0.22Ga0.78As grown on misoriented (111)B GaAs
- Author
- CHIN, A1 ; CHENG, T. M1 ; PENG, S. P1 ; OSMAN, Z; UTPAL DAS; CHANG, C. Y
[1] National Chiao Tung univ., dep. electronics eng., Hsinchu 300, Taiwan, Province of China - Source
Applied physics letters. 1993, Vol 63, Num 17, pp 2381-2383 ; ref : 12 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium arséniure Composé ternaire Couche épitaxique Défaut Déplacement spectral Effet Hall Etude expérimentale Gallium arséniure Intensité intégrée MET Matériau semiconducteur Mobilité électron Orientation cristalline Photoluminescence Rendement Substrat Al As Ga
- Keyword (en)
- Aluminium arsenides Ternary compounds Epitaxial layers Defects Spectral shift Hall effect Experimental study Gallium arsenides Integrated intensity TEM Semiconductor materials Electron mobility Crystal orientation Photoluminescence Yields Substrates
- Keyword (es)
- Intensidad integrada
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H55 Photoluminescence / 001B70H55C Iii-v semiconductors
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3814701
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.110481 
https://dx.doi.org/10.1063/1.110481
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