Studies of NH3 thermal nitridation of ultrathin Si-oxide films on Si using photoemission spectroscopy with synchrotron radiation
- Author
- YAMAMOTO, K.-I; NAKAZAWA, M
Hitachi, Ltd, cent. res. lab., Kokubunji, Tokyo 185, Japan - Source
Japanese journal of applied physics. 1994, Vol 33, Num 1A, pp 285-289 ; 1 ; ref : 23 ref
- CODEN
- JJAPA5
- ISSN
- 0021-4922
- Scientific domain
- Crystallography; Optics; Condensed state physics; Physics; Plasma physics
- Publisher
- Japanese journal of applied physics, Tokyo
- Publication country
- Japan
- Document type
- Article
- Language
- English
- Keyword (fr)
- Composé binaire Croissance cristalline Désorption Etude expérimentale Impureté Mécanisme Nitruration Rayonnement synchrotron Silicium oxyde Spectrométrie photoélectron Traitement surface Couche ultramince O Si SiO2 Composé minéral
- Keyword (en)
- Binary compounds Crystal growth Desorption Experimental study Impurities Mechanism Nitridation Synchrotron radiation Silicon oxides Photoelectron spectroscopy Surface treatments Ultrathin layer Inorganic compounds
- Keyword (es)
- Mecanismo
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70I Electron and ion emission by liquids and solids; impact phenomena / 001B70I60 Photoemission and photoelectron spectra / 001B70I60D Adsorbed layers and thin films
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3954366
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1143/JJAP.33.285 
https://dx.doi.org/10.1143/JJAP.33.285
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:19:\"10.1143\/JJAP.33.285\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:128:\"Studies of NH3 thermal nitridation of ultrathin Si-oxide films on Si using photoemission spectroscopy with synchrotron radiation\";s:9:\"\u0000*\u0000jtitle\";s:35:\"Japanese journal of applied physics\";s:9:\"\u0000*\u0000stitle\";s:18:\"Jpn. j. appl. phys\";s:7:\"\u0000*\u0000date\";s:4:\"1994\";s:9:\"\u0000*\u0000volume\";s:2:\"33\";s:8:\"\u0000*\u0000issue\";s:2:\"1A\";s:8:\"\u0000*\u0000spage\";s:3:\"285\";s:8:\"\u0000*\u0000epage\";s:3:\"289\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0021-4922\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"YAMAMOTO\";s:10:\"\u0000*\u0000aufirst\";s:4:\"K.-I\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:11:\"NAKAZAWA, M\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JJAPA5\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:1:\"1\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:128:\"Studies of NH3 thermal nitridation of ultrathin Si-oxide films on Si using photoemission spectroscopy with synchrotron radiation\";s:8:\"\u0000*\u0000place\";s:5:\"Tokyo\";s:6:\"\u0000*\u0000pub\";s:35:\"Japanese journal of applied physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:19:\"10.1143\/JJAP.33.285\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:128:\"Studies of NH3 thermal nitridation of ultrathin Si-oxide films on Si using photoemission spectroscopy with synchrotron radiation\";s:9:\"\u0000*\u0000jtitle\";s:35:\"Japanese journal of applied physics\";s:9:\"\u0000*\u0000stitle\";s:18:\"Jpn. j. appl. phys\";s:7:\"\u0000*\u0000date\";s:4:\"1994\";s:9:\"\u0000*\u0000volume\";s:2:\"33\";s:8:\"\u0000*\u0000issue\";s:2:\"1A\";s:8:\"\u0000*\u0000spage\";s:3:\"285\";s:8:\"\u0000*\u0000epage\";s:3:\"289\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0021-4922\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"YAMAMOTO\";s:10:\"\u0000*\u0000aufirst\";s:4:\"K.-I\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:11:\"NAKAZAWA, M\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JJAPA5\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:1:\"1\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:128:\"Studies of NH3 thermal nitridation of ultrathin Si-oxide films on Si using photoemission spectroscopy with synchrotron radiation\";s:8:\"\u0000*\u0000place\";s:5:\"Tokyo\";s:6:\"\u0000*\u0000pub\";s:35:\"Japanese journal of applied physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:19:\"10.1143\/JJAP.33.285\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:19:\"10.1143\/JJAP.33.285\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:128:\"Studies of NH3 thermal nitridation of ultrathin Si-oxide films on Si using photoemission spectroscopy with synchrotron radiation\";s:9:\"\u0000*\u0000jtitle\";s:35:\"Japanese journal of applied physics\";s:9:\"\u0000*\u0000stitle\";s:18:\"Jpn. j. appl. phys\";s:7:\"\u0000*\u0000date\";s:4:\"1994\";s:9:\"\u0000*\u0000volume\";s:2:\"33\";s:8:\"\u0000*\u0000issue\";s:2:\"1A\";s:8:\"\u0000*\u0000spage\";s:3:\"285\";s:8:\"\u0000*\u0000epage\";s:3:\"289\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0021-4922\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"YAMAMOTO\";s:10:\"\u0000*\u0000aufirst\";s:4:\"K.-I\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:11:\"NAKAZAWA, M\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JJAPA5\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:1:\"1\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:128:\"Studies of NH3 thermal nitridation of ultrathin Si-oxide films on Si using photoemission spectroscopy with synchrotron radiation\";s:8:\"\u0000*\u0000place\";s:5:\"Tokyo\";s:6:\"\u0000*\u0000pub\";s:35:\"Japanese journal of applied physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:19:\"10.1143\/JJAP.33.285\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:128:\"Studies of NH3 thermal nitridation of ultrathin Si-oxide films on Si using photoemission spectroscopy with synchrotron radiation\";s:9:\"\u0000*\u0000jtitle\";s:35:\"Japanese journal of applied physics\";s:9:\"\u0000*\u0000stitle\";s:18:\"Jpn. j. appl. phys\";s:7:\"\u0000*\u0000date\";s:4:\"1994\";s:9:\"\u0000*\u0000volume\";s:2:\"33\";s:8:\"\u0000*\u0000issue\";s:2:\"1A\";s:8:\"\u0000*\u0000spage\";s:3:\"285\";s:8:\"\u0000*\u0000epage\";s:3:\"289\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0021-4922\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"YAMAMOTO\";s:10:\"\u0000*\u0000aufirst\";s:4:\"K.-I\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:11:\"NAKAZAWA, M\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JJAPA5\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:1:\"1\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:128:\"Studies of NH3 thermal nitridation of ultrathin Si-oxide films on Si using photoemission spectroscopy with synchrotron radiation\";s:8:\"\u0000*\u0000place\";s:5:\"Tokyo\";s:6:\"\u0000*\u0000pub\";s:35:\"Japanese journal of applied physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:19:\"10.1143\/JJAP.33.285\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:128:\"Studies of NH3 thermal nitridation of ultrathin Si-oxide films on Si using photoemission spectroscopy with synchrotron radiation\";s:9:\"\u0000*\u0000jtitle\";s:35:\"Japanese journal of applied physics\";s:9:\"\u0000*\u0000stitle\";s:18:\"Jpn. j. appl. phys\";s:7:\"\u0000*\u0000date\";s:4:\"1994\";s:9:\"\u0000*\u0000volume\";s:2:\"33\";s:8:\"\u0000*\u0000issue\";s:2:\"1A\";s:8:\"\u0000*\u0000spage\";s:3:\"285\";s:8:\"\u0000*\u0000epage\";s:3:\"289\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0021-4922\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"YAMAMOTO\";s:10:\"\u0000*\u0000aufirst\";s:4:\"K.-I\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:11:\"NAKAZAWA, M\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JJAPA5\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:1:\"1\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:128:\"Studies of NH3 thermal nitridation of ultrathin Si-oxide films on Si using photoemission spectroscopy with synchrotron radiation\";s:8:\"\u0000*\u0000place\";s:5:\"Tokyo\";s:6:\"\u0000*\u0000pub\";s:35:\"Japanese journal of applied physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
