Effect of various factors upon the stoichiometry of GaAs homoepitaxial layers grown by LPE
- Author
- GOVORKOV, A. V; NOVIKOV, A. G; MILVIDSKII, M. G; SHLENSKII, A. A; FOMIN, V. G; YUGOVA, T. G
Inst. rare metals, Moscow, Russian Federation - Source
Physica status solidi. A. Applied research. 1994, Vol 144, Num 1, pp 121-130 ; ref : 11 ref
- CODEN
- PSSABA
- ISSN
- 0031-8965
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Wiley-VCH, Berlin
- Publication country
- Germany
- Document type
- Article
- Language
- Russian
- Keyword (fr)
- Addition étain Composé binaire Couche épaisse Dopage Etude expérimentale Gallium arséniure Homoépitaxie LPE Matériau semiconducteur Orientation cristalline Photoluminescence Stoechiométrie Substrat As Ga GaAs Composé minéral
- Keyword (en)
- Tin additions Binary compounds Thick film Doping Experimental study Gallium arsenides Homoepitaxy LPE Semiconductor materials Crystal orientation Photoluminescence Stoichiometry Substrates Inorganic compounds
- Keyword (es)
- Capa espesa Doping Homoepitaxia
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15L Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4205891
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1002/pssa.2211440113 
https://dx.doi.org/10.1002/pssa.2211440113
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