Photoexcitation of local vibrations in semiconductors
- Author
- ABAKUMOV, V. N; PAKHOMOV, A. A; PARSONS, D (Translator)
Russian acad. sci., A. F. Ioffe physicotech. inst., Ussr - Source
JETP letters. 1992, Vol 56, Num 2, pp 99-102 ; ref : 6 ref
- CODEN
- JTPLA2
- ISSN
- 0021-3640
- Scientific domain
- Condensed state physics; Physics
- Publisher
- Springer, Heidelberg
- Publication country
- Germany
- Document type
- Article
- Language
- English
- Keyword (fr)
- Concentration porteur charge Défaut Eclairement Etude théorique Mode vibration Niveau profond Photoionisation Piégeage porteur charge Porteur libre Processus n phonons Semiconducteur
- Keyword (en)
- Charge carrier concentration Defect Illumination Theoretical study Vibrational mode Deep level Photoionization Charge carrier trapping Free carrier Multiphonon process Semiconductor materials
- Keyword (es)
- Concentración portador carga Defecto Alumbrado Estudio teórico Modo de vibración Nivel profundo Fotoionización Captura portador carga Portador libre Proceso n fonones Semiconductor(material)
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60C Lattice dynamics / 001B60C20 Phonons and vibrations in crystal lattices
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4305138
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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