InGaAs/InP double-heterojunction bipolar transistors with step graded InGaAsP between InGaAs base and InP collector grown by metalorganic chemical vapor deposition
- Author
- OHKUBO, M; IKETANI, A; IJICHI, T; KIKUTA, T
Furukawa Electric Co., Ltd, Yokohama R&D lab., Nishi-ku, Yokohama 220, Japan - Source
Applied physics letters. 1991, Vol 59, Num 21, pp 2697-2699 ; ref : 5 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Collecteur Diode Electron Ion Masse Transistor Vitesse
- Keyword (en)
- Collector Diode Electrons Ions Mass Transistor Velocity
- Keyword (es)
- Colector Diodo Electrón Ión Masa Transistor Velocidad
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40A Electromagnetism; electron and ion optics / 001B40A90 Other topics in electromagnetism; electron and ion optics
- Discipline
- Physics : electromagnetism
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4387068
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.105888 
https://dx.doi.org/10.1063/1.105888
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