Influence of double implantation of silicon and fluorine atoms on electrical parameters of semiinsulating gallium arsenide
- Author
- BUMAI, Y. A; MALAKHOVSKAYA, V. E; UL'YASHIN, A. G; SHLOPAK, N. V; SAMOILYUK, T. T; NIKITINA, T. D; GORUPA, K. S; AVTYUSHKOV, E. V
Belorussian polytech. inst., Minsk, Byelorussia - Source
Soviet physics. Semiconductors. 1992, Vol 26, Num 7, pp 730-733 ; ref : 20 ref
- ISSN
- 0038-5700
- Scientific domain
- Electronics; Condensed state physics
- Publisher
- American Institute of Physics, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Analyse amas Composé minéral Concentration porteur charge Défaut complexe Etude expérimentale Gallium Arséniure Implantation ion Mobilité porteur charge Méthode Hückel Niveau défaut Recuit thermique Semiconducteur
- Keyword (en)
- Cluster analysis Inorganic compound Charge carrier concentration Complex defect Experimental study Gallium Arsenides Ion implantation Charge carrier mobility Hueckel method Defect level Thermal annealing Semiconductor materials
- Keyword (es)
- Analisis cluster Compuesto inorgánico Concentración portador carga Defecto complejo Estudio experimental Galio Arseniuro Implantación ión Movilidad portador carga Método Huckel Recocido térmico Semiconductor(material)
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B20 Conductivity phenomena in semiconductors and insulators / 001B70B20F Low-field transport and mobility; piezoresistance
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4436340
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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