0.1-Micrometer scaling by 1:1 synchrotron radiation lithography
- Author
- MOCHIJI, K; OGAWA, T; OIZUMIL, H; SOGA, T
Hitachi Ltd, cent. res. lab., Tokyo 185, Japan - Source
Microelectronic engineering. 1992, Vol 18, Num 4, pp 333-340 ; ref : 6 ref
- CODEN
- MIENEF
- ISSN
- 0167-9317
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Diffraction RX Electron secondaire Fabrication microélectronique Lithographie RX Masque Rayonnement synchrotron Stress Impression proximité
- Keyword (en)
- X ray diffraction Secondary electron Microelectronic fabrication X ray lithography Mask Synchrotron radiation Stress
- Keyword (es)
- Difracción RX Electrón secundario Fabricación microeléctrica Litografía RX Máscara Radiación sincrotrón Stress
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4479631
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0167-9317(92)90133-C 
https://dx.doi.org/10.1016/0167-9317(92)90133-C
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