Thin TiO2 films prepared by low pressure chemical vapor deposition
- Author
- RAUSCH, N; BURTE, E. P
Fraunhofer-Arbeitsgruppe Integrierte Schaltungen, 8520 Erlangen, Germany - Source
Journal of the Electrochemical Society. 1993, Vol 140, Num 1, pp 145-149 ; ref : 10 ref
- CODEN
- JESOAN
- ISSN
- 0013-4651
- Scientific domain
- General chemistry, physical chemistry; Crystallography; Electrical engineering; Condensed state physics
- Publisher
- Electrochemical Society, Pennington, NJ
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Basse pression Caractéristique courant tension Circuit intégré Composé minéral Constante diélectrique Couche mince Croissance cristalline Diélectrique Dépôt chimique phase vapeur Etude expérimentale Microscopie électronique balayage Microscopie électronique transmission Recuit thermique Titane IV Oxyde Métal transition Composé
- Keyword (en)
- Low pressure Voltage current curve Integrated circuit Inorganic compound Permittivity Thin film Crystal growth Dielectric materials Chemical vapor deposition Experimental study Scanning electron microscopy Transmission electron microscopy Thermal annealing Titanium IV Oxides Transition metal Compounds
- Keyword (es)
- Baja presión Característica corriente tensión Circuito integrado Compuesto inorgánico Constante dieléctrica Capa fina Crecimiento cristalino Dieléctrico Depósito químico fase vapor Estudio experimental Microscopía electrónica barrido Microscopía electrónica transmisión Recocido térmico Titanio IV Óxido Metal transición Compuesto
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4530497
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1149/1.2056076 
https://dx.doi.org/10.1149/1.2056076
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