Electrical and optical properties of InP grown by metalorganic vapor phase epitaxy with extremely low V/III ratios using tertiarybutylphosphine
- Author
- HORITA, M; SUZUKI, M; MATSUSHIMA, Y
KDD R&D Laboratories, 2-1-15 Ohara Kamifukuoka-shi, Saitama 356, Japan - Source
Applied physics letters. 1993, Vol 62, Num 8, pp 882-884 ; ref : 11 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Centre accepteur Composé minéral Composé organométallique Concentration porteur charge Couche épaisse Effet Hall Epitaxie Etude expérimentale Indium Phosphure Microstructure Méthode phase vapeur Photoluminescence Semiconducteur Surface
- Keyword (en)
- Acceptor center Inorganic compound Organometallic compound Charge carrier concentration Thick film Hall effect Epitaxy Experimental study Indium Phosphides Microstructure Growth from vapor Photoluminescence Semiconductor materials Surface
- Keyword (es)
- Centro aceptor Compuesto inorgánico Compuesto organometálico Concentración portador carga Capa espesa Efecto Hall Epitaxia Estudio experimental Indio Fosfuro Microestructura Método fase vapor Fotoluminiscencia Semiconductor(material) Superficie
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B80 Conductivity of specific materials
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4573664
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.108554 
https://dx.doi.org/10.1063/1.108554
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