Effects of conventional and rapid thermal annealing on minority carrier diffusion length in float zone and Czochralski silicon crystals
- Author
- BARHDADI, A1 ; AMZIL, H1 ; M'GAFAD, N1 ; BIAZ, T1 ; EICHHAMMER, W2 ; MULLER, J. C2 ; SIFFERT, P2
[1] E. N. sup. Takaddoum, lab. physique semi-conductors énergie solaire, Rabat, Morocco
[2] CNRS, cent. rech. nucléaires, 67037 Strasbourg, France - Conference title
- REMCES V : Rencontre marocaine sur la chimie de l'état solide
- Conference name
- REMCES V : Rencontre marocaine sur la chimie de l'état solide (5 ; Casablanca 1991-10-30)
- Author (monograph)
- ARIDE, J (Editor)1 ; BOUKHARI, A (Editor); EL JAZOULI, A (Editor); LAMIRE, M (Editor); MAN SOURI, I (Editor); MOUSSA, R (Editor); RAFIQ, M (Editor); ZAHIR, M (Editor)
[1] Ecole normale supérieure, lab. physiochimie matériaux, Rabat, Morocco - Source
Journal of alloys and compounds. 1992, Vol 188, pp 221-224 ; ref : 15 ref
- ISSN
- 0925-8388
- Scientific domain
- Inorganic chemistry; Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Lausanne
- Publication country
- Switzerland
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Diffusion porteur charge Diffusion thermique Méthode Czochralski Recuit thermique rapide Semiconducteur Silicium
- Keyword (en)
- Charge carrier scattering Thermal diffusion Czochralski method Rapid thermal annealing Semiconductor materials Silicon
- Keyword (es)
- Difusión portador carga Difusión térmica Método Czochralski Recocido térmico rápido Semiconductor(material) Silicio
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B20 Conductivity phenomena in semiconductors and insulators
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4592797
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0925-8388(92)90680-8 
https://dx.doi.org/10.1016/0925-8388(92)90680-8
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0925-8388(92)90680-8\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:135:\"Effects of conventional and rapid thermal annealing on minority carrier diffusion length in float zone and Czochralski silicon crystals\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Journal of alloys and compounds\";s:9:\"\u0000*\u0000stitle\";s:15:\"J. alloys compd\";s:7:\"\u0000*\u0000date\";s:4:\"1992\";s:9:\"\u0000*\u0000volume\";s:3:\"188\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"221\";s:8:\"\u0000*\u0000epage\";s:3:\"224\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0925-8388\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"BARHDADI\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:8:\"AMZIL, H\";i:1;s:10:\"M'GAFAD, N\";i:2;s:7:\"BIAZ, T\";i:3;s:13:\"EICHHAMMER, W\";i:4;s:12:\"MULLER, J. C\";i:5;s:10:\"SIFFERT, P\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:62:\"REMCES V : Rencontre marocaine sur la chimie de l'\u00e9tat solide\";s:8:\"\u0000*\u0000title\";s:135:\"Effects of conventional and rapid thermal annealing on minority carrier diffusion length in float zone and Czochralski silicon crystals\";s:8:\"\u0000*\u0000place\";s:8:\"Lausanne\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0925-8388(92)90680-8\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:135:\"Effects of conventional and rapid thermal annealing on minority carrier diffusion length in float zone and Czochralski silicon crystals\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Journal of alloys and compounds\";s:9:\"\u0000*\u0000stitle\";s:15:\"J. alloys compd\";s:7:\"\u0000*\u0000date\";s:4:\"1992\";s:9:\"\u0000*\u0000volume\";s:3:\"188\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"221\";s:8:\"\u0000*\u0000epage\";s:3:\"224\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0925-8388\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"BARHDADI\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:8:\"AMZIL, H\";i:1;s:10:\"M'GAFAD, N\";i:2;s:7:\"BIAZ, T\";i:3;s:13:\"EICHHAMMER, W\";i:4;s:12:\"MULLER, J. C\";i:5;s:10:\"SIFFERT, P\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:62:\"REMCES V : Rencontre marocaine sur la chimie de l'\u00e9tat solide\";s:8:\"\u0000*\u0000title\";s:135:\"Effects of conventional and rapid thermal annealing on minority carrier diffusion length in float zone and Czochralski silicon crystals\";s:8:\"\u0000*\u0000place\";s:8:\"Lausanne\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0925-8388(92)90680-8\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0925-8388(92)90680-8\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:135:\"Effects of conventional and rapid thermal annealing on minority carrier diffusion length in float zone and Czochralski silicon crystals\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Journal of alloys and compounds\";s:9:\"\u0000*\u0000stitle\";s:15:\"J. alloys compd\";s:7:\"\u0000*\u0000date\";s:4:\"1992\";s:9:\"\u0000*\u0000volume\";s:3:\"188\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"221\";s:8:\"\u0000*\u0000epage\";s:3:\"224\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0925-8388\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"BARHDADI\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:8:\"AMZIL, H\";i:1;s:10:\"M'GAFAD, N\";i:2;s:7:\"BIAZ, T\";i:3;s:13:\"EICHHAMMER, W\";i:4;s:12:\"MULLER, J. C\";i:5;s:10:\"SIFFERT, P\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:62:\"REMCES V : Rencontre marocaine sur la chimie de l'\u00e9tat solide\";s:8:\"\u0000*\u0000title\";s:135:\"Effects of conventional and rapid thermal annealing on minority carrier diffusion length in float zone and Czochralski silicon crystals\";s:8:\"\u0000*\u0000place\";s:8:\"Lausanne\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0925-8388(92)90680-8\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:135:\"Effects of conventional and rapid thermal annealing on minority carrier diffusion length in float zone and Czochralski silicon crystals\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Journal of alloys and compounds\";s:9:\"\u0000*\u0000stitle\";s:15:\"J. alloys compd\";s:7:\"\u0000*\u0000date\";s:4:\"1992\";s:9:\"\u0000*\u0000volume\";s:3:\"188\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"221\";s:8:\"\u0000*\u0000epage\";s:3:\"224\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0925-8388\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"BARHDADI\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:8:\"AMZIL, H\";i:1;s:10:\"M'GAFAD, N\";i:2;s:7:\"BIAZ, T\";i:3;s:13:\"EICHHAMMER, W\";i:4;s:12:\"MULLER, J. C\";i:5;s:10:\"SIFFERT, P\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:62:\"REMCES V : Rencontre marocaine sur la chimie de l'\u00e9tat solide\";s:8:\"\u0000*\u0000title\";s:135:\"Effects of conventional and rapid thermal annealing on minority carrier diffusion length in float zone and Czochralski silicon crystals\";s:8:\"\u0000*\u0000place\";s:8:\"Lausanne\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0925-8388(92)90680-8\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:135:\"Effects of conventional and rapid thermal annealing on minority carrier diffusion length in float zone and Czochralski silicon crystals\";s:9:\"\u0000*\u0000jtitle\";s:31:\"Journal of alloys and compounds\";s:9:\"\u0000*\u0000stitle\";s:15:\"J. alloys compd\";s:7:\"\u0000*\u0000date\";s:4:\"1992\";s:9:\"\u0000*\u0000volume\";s:3:\"188\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"221\";s:8:\"\u0000*\u0000epage\";s:3:\"224\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0925-8388\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"BARHDADI\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:8:\"AMZIL, H\";i:1;s:10:\"M'GAFAD, N\";i:2;s:7:\"BIAZ, T\";i:3;s:13:\"EICHHAMMER, W\";i:4;s:12:\"MULLER, J. C\";i:5;s:10:\"SIFFERT, P\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:62:\"REMCES V : Rencontre marocaine sur la chimie de l'\u00e9tat solide\";s:8:\"\u0000*\u0000title\";s:135:\"Effects of conventional and rapid thermal annealing on minority carrier diffusion length in float zone and Czochralski silicon crystals\";s:8:\"\u0000*\u0000place\";s:8:\"Lausanne\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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