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Electrical transport in the amorphous Ge1-xSe2Cdx system

Author
SOHAN LAL SHARMA; SHARMA, D. R
Himachal Pradesh univ., dep. physics, Shimla 171005, India
Source

Semiconductor science and technology. 1993, Vol 8, Num 3, pp 344-346 ; ref : 17 ref

CODEN
SSTEET
ISSN
0268-1242
Scientific domain
Electronics; Optics; Condensed state physics
Publisher
Institute of Physics, Bristol
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Basse température Cadmium Germanium Séléniure Mixte Champ électrique Composition chimique Composé minéral Conductivité électrique Energie activation Etat amorphe Etude expérimentale Haute température Semiconducteur Température
Keyword (en)
Low temperature Cadmium Germanium Selenides Mixed Electric field Chemical composition Inorganic compound Electrical conductivity Activation energy Amorphous state Experimental study High temperature Semiconductor materials Temperature
Keyword (es)
Baja temperatura Cadmio Germanio Seleniuro Mixto Campo eléctrico Composición química Compuesto inorgánico Conductividad eléctrica Energía activación Estado amorfo Estudio experimental Alta temperatura Semiconductor(material) Temperatura
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B80 Conductivity of specific materials

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
4642424

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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