Electrical and optical properties of silicide single crystals and thin films
- Author
- NAVA, F1 ; TU, K. N1 ; THOMAS, O; SENATEUR, J. P; MADAR, R; BORGHESI, A; GUIZZETTI, G; GOTTLIEB, U; LABORDE, O; BISI, O
[1] T. J. Watson res. cent., IBM res. div., Yorktown Heights NY 10598, United States - Source
Materials science reports. 1993, Vol 9, Num 4-5, pp 141-200 ; ref : 155 ref
- CODEN
- MSREEL
- ISSN
- 0920-2307
- Scientific domain
- Crystallography; Mechanics acoustics; Metallurgy, welding; Condensed state physics
- Publisher
- North-Holland, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Anisotropie Article synthèse Chaleur massique Composé minéral Conductivité électrique Couche mince Diffusion porteur charge Effet Hall Indice extinction Indice réfraction Interaction électron phonon Interaction électronique Magnétoconductivité Monocristal Métal transition Siliciure Préparation Réflexion optique Métal transition Composé
- Keyword (en)
- Anisotropy Review Specific heat Inorganic compound Electrical conductivity Thin film Charge carrier scattering Hall effect Extinction index Refraction index Electron phonon interaction Electron interaction Magnetoconductivity Single crystal Transition metal Silicides Preparation Optical reflection Transition metal Compounds
- Keyword (es)
- Anisotropía Artículo síntesis Calor específico Compuesto inorgánico Conductividad eléctrica Capa fina Difusión portador carga Efecto Hall Indice extinción Indice refracción Interacción electrón fonón Interacción electrónica Magnetoconductividad Monocristal Metal transición Siliciuro Preparación Reflexión óptica Metal transición Compuesto
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B80 Conductivity of specific materials
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4702071
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1016/0920-2307(93)90007-2 
https://dx.doi.org/10.1016/0920-2307(93)90007-2
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0920-2307(93)90007-2\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:76:\"Electrical and optical properties of silicide single crystals and thin films\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Materials science reports\";s:9:\"\u0000*\u0000stitle\";s:15:\"Mater. sci. rep\";s:7:\"\u0000*\u0000date\";s:4:\"1993\";s:9:\"\u0000*\u0000volume\";s:1:\"9\";s:8:\"\u0000*\u0000issue\";s:3:\"4-5\";s:8:\"\u0000*\u0000spage\";s:3:\"141\";s:8:\"\u0000*\u0000epage\";s:3:\"200\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0920-2307\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"NAVA\";s:10:\"\u0000*\u0000aufirst\";s:1:\"F\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:9:{i:0;s:8:\"TU, K. N\";i:1;s:9:\"THOMAS, O\";i:2;s:14:\"SENATEUR, J. P\";i:3;s:8:\"MADAR, R\";i:4;s:11:\"BORGHESI, A\";i:5;s:12:\"GUIZZETTI, G\";i:6;s:11:\"GOTTLIEB, U\";i:7;s:10:\"LABORDE, O\";i:8;s:7:\"BISI, O\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"MSREEL\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:76:\"Electrical and optical properties of silicide single crystals and thin films\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:13:\"North-Holland\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0920-2307(93)90007-2\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:76:\"Electrical and optical properties of silicide single crystals and thin films\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Materials science reports\";s:9:\"\u0000*\u0000stitle\";s:15:\"Mater. sci. rep\";s:7:\"\u0000*\u0000date\";s:4:\"1993\";s:9:\"\u0000*\u0000volume\";s:1:\"9\";s:8:\"\u0000*\u0000issue\";s:3:\"4-5\";s:8:\"\u0000*\u0000spage\";s:3:\"141\";s:8:\"\u0000*\u0000epage\";s:3:\"200\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0920-2307\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"NAVA\";s:10:\"\u0000*\u0000aufirst\";s:1:\"F\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:9:{i:0;s:8:\"TU, K. N\";i:1;s:9:\"THOMAS, O\";i:2;s:14:\"SENATEUR, J. P\";i:3;s:8:\"MADAR, R\";i:4;s:11:\"BORGHESI, A\";i:5;s:12:\"GUIZZETTI, G\";i:6;s:11:\"GOTTLIEB, U\";i:7;s:10:\"LABORDE, O\";i:8;s:7:\"BISI, O\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"MSREEL\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:76:\"Electrical and optical properties of silicide single crystals and thin films\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:13:\"North-Holland\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0920-2307(93)90007-2\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0920-2307(93)90007-2\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:76:\"Electrical and optical properties of silicide single crystals and thin films\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Materials science reports\";s:9:\"\u0000*\u0000stitle\";s:15:\"Mater. sci. rep\";s:7:\"\u0000*\u0000date\";s:4:\"1993\";s:9:\"\u0000*\u0000volume\";s:1:\"9\";s:8:\"\u0000*\u0000issue\";s:3:\"4-5\";s:8:\"\u0000*\u0000spage\";s:3:\"141\";s:8:\"\u0000*\u0000epage\";s:3:\"200\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0920-2307\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"NAVA\";s:10:\"\u0000*\u0000aufirst\";s:1:\"F\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:9:{i:0;s:8:\"TU, K. N\";i:1;s:9:\"THOMAS, O\";i:2;s:14:\"SENATEUR, J. P\";i:3;s:8:\"MADAR, R\";i:4;s:11:\"BORGHESI, A\";i:5;s:12:\"GUIZZETTI, G\";i:6;s:11:\"GOTTLIEB, U\";i:7;s:10:\"LABORDE, O\";i:8;s:7:\"BISI, O\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"MSREEL\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:76:\"Electrical and optical properties of silicide single crystals and thin films\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:13:\"North-Holland\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0920-2307(93)90007-2\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:76:\"Electrical and optical properties of silicide single crystals and thin films\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Materials science reports\";s:9:\"\u0000*\u0000stitle\";s:15:\"Mater. sci. rep\";s:7:\"\u0000*\u0000date\";s:4:\"1993\";s:9:\"\u0000*\u0000volume\";s:1:\"9\";s:8:\"\u0000*\u0000issue\";s:3:\"4-5\";s:8:\"\u0000*\u0000spage\";s:3:\"141\";s:8:\"\u0000*\u0000epage\";s:3:\"200\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0920-2307\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"NAVA\";s:10:\"\u0000*\u0000aufirst\";s:1:\"F\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:9:{i:0;s:8:\"TU, K. N\";i:1;s:9:\"THOMAS, O\";i:2;s:14:\"SENATEUR, J. P\";i:3;s:8:\"MADAR, R\";i:4;s:11:\"BORGHESI, A\";i:5;s:12:\"GUIZZETTI, G\";i:6;s:11:\"GOTTLIEB, U\";i:7;s:10:\"LABORDE, O\";i:8;s:7:\"BISI, O\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"MSREEL\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:76:\"Electrical and optical properties of silicide single crystals and thin films\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:13:\"North-Holland\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:28:\"10.1016\/0920-2307(93)90007-2\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:76:\"Electrical and optical properties of silicide single crystals and thin films\";s:9:\"\u0000*\u0000jtitle\";s:25:\"Materials science reports\";s:9:\"\u0000*\u0000stitle\";s:15:\"Mater. sci. rep\";s:7:\"\u0000*\u0000date\";s:4:\"1993\";s:9:\"\u0000*\u0000volume\";s:1:\"9\";s:8:\"\u0000*\u0000issue\";s:3:\"4-5\";s:8:\"\u0000*\u0000spage\";s:3:\"141\";s:8:\"\u0000*\u0000epage\";s:3:\"200\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0920-2307\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"NAVA\";s:10:\"\u0000*\u0000aufirst\";s:1:\"F\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:9:{i:0;s:8:\"TU, K. N\";i:1;s:9:\"THOMAS, O\";i:2;s:14:\"SENATEUR, J. P\";i:3;s:8:\"MADAR, R\";i:4;s:11:\"BORGHESI, A\";i:5;s:12:\"GUIZZETTI, G\";i:6;s:11:\"GOTTLIEB, U\";i:7;s:10:\"LABORDE, O\";i:8;s:7:\"BISI, O\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"MSREEL\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:76:\"Electrical and optical properties of silicide single crystals and thin films\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:13:\"North-Holland\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
