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Electrical properties of p-type HgCdTe/ZnS interfaces

Author
HAO-XIN YUAN; FEI-MING TONG; DING-YUAN TANG
Acad. sinica, Shanghai inst. tech. physics, Shanghai 200083, China
Source

Optical engineering (Bellingham. Print). 1993, Vol 32, Num 3, pp 608-612 ; ref : 14 ref

CODEN
OPEGAR
ISSN
0091-3286
Scientific domain
Electronics; Optics; Telecommunications
Publisher
Society of Photo-Optical Instrumentation Engineers, Bellingham, WA
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Cadmium Mercure Tellurure Mixte Capacité électrique Cristal Interface Isolant Méthode mesure Passivation Propriété électrique Solide Traitement surface Zinc Séléniure Caractéristique tension capacité électrique Dispositif métal isolant semiconducteur Passivation surface
Keyword (en)
Cadmium Mercury Tellurides Mixed Capacitance Crystals Interface Insulating material Measurement method Passivation Electrical properties Solid Surface treatment Zinc Selenides
Keyword (es)
Cadmio Mercurio Telururo Mixto Capacitancia Cristal Interfase Aislante Método medida Pasivación Propiedad eléctrica Sólido Tratamiento superficie Zinc Seleniuro
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B20 Conductivity phenomena in semiconductors and insulators

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
4715337

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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