Principles for controlling the optical end electrical properties of hydrogenated amorphous silicon deposited from a silane plasma
- Author
- HISHIKAWA, Y; TSUDA, S; WAKISAKA, K; KUWANO, Y
SANYO Electric Co., Ltd, functional materials res. cent., Hirakata, Osaka 573, Japan - Source
Journal of applied physics. 1993, Vol 73, Num 9, pp 4227-4231 ; ref : 23 ref
- CODEN
- JAPIAU
- ISSN
- 0021-8979
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Publisher
- American Institute of Physics, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Bande interdite Composition chimique Composé minéral Conductivité électrique Couche mince Dépôt chimique phase vapeur Etat amorphe Etude expérimentale Photoconductivité Semiconducteur Silicium amorphe hydrogéné Système hydrogène silicium
- Keyword (en)
- Energy gap Chemical composition Inorganic compound Electrical conductivity Thin film Chemical vapor deposition Amorphous state Experimental study Photoconductivity Semiconductor materials Hydrogenated amorphous silicon
- Keyword (es)
- Banda prohibida Composición química Compuesto inorgánico Conductividad eléctrica Capa fina Depósito químico fase vapor Estado amorfo Estudio experimental Fotoconductividad Semiconductor(material)
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B80 Conductivity of specific materials
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4733488
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.352828 
https://dx.doi.org/10.1063/1.352828
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