A novel body contact for SIMOX based SOI MOSFETs
- Author
- PATEL, M; RATNAM, P; SALAMA, C. A. T
Univ. Toronto, dep. electrical eng., Toronto ON M5S 1A4, Canada - Source
Solid-state electronics. 1991, Vol 34, Num 10, pp 1071-1075 ; ref : 12 ref
- ISSN
- 0038-1101
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Oxford
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Amélioration Caractéristique courant tension Conception circuit Contact isolant semiconducteur Contact métal oxyde Etude théorique Performance Réponse transitoire Technologie silicium sur isolant Transistor MOS Transistor effet champ
- Keyword (en)
- Improvement Voltage current curve Circuit design Semiconductor insulator contact Metal oxide contact Theoretical study Performance Transient response Silicon on insulator technology MOS transistor Field effect transistor
- Keyword (es)
- Mejoría Característica corriente tensión Concepción circuito Contacto aislante semiconductor Contacto metal óxido Estudio teórico Rendimiento Respuesta transitoria Tecnología silicio sobre aislante Transistor MOS Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5100400
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0038-1101(91)90102-5 
https://dx.doi.org/10.1016/0038-1101(91)90102-5
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