34 GHz bandwidth GaAs high-speed Schottky barrier photodiode fabricated by chemical-beam epitaxy
- Author
- SEKIGUCHI, Y; KUWAHARA, T; KOBAYASHI, F; IIO, S
Optical Measurement Technology Development Co. Ltd, Musashino-shi Tokyo 180, Japan - Source
Japanese journal of applied physics. 1992, Vol 31, Num 2B, pp L180-L182 ; 2 ; ref : 8 ref
- CODEN
- JJAPA5
- ISSN
- 0021-4922
- Scientific domain
- Crystallography; Optics; Condensed state physics; Physics; Plasma physics
- Publisher
- Japanese journal of applied physics, Tokyo
- Publication country
- Japan
- Document type
- Article
- Language
- English
- Keyword (fr)
- Caractérisation Caractéristique courant tension Conception Condensation faisceau chimique Diode barrière Schottky Dispositif optoélectronique Epitaxie Gallium Arséniure Photodiode Photodétecteur
- Keyword (en)
- Characterization Voltage current curve Design Chemical beam condensation Schottky barrier diode Optoelectronic device Epitaxy Gallium Arsenides Photodiode Photodetector
- Keyword (es)
- Caracterización Característica corriente tensión Diseño Condensación haz químico Diodo barrera Schottky Dispositivo optoelectrónico Epitaxia Galio Arseniuro Fotodiodo Fotodetector
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5143384
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1143/JJAP.31.L180 
https://dx.doi.org/10.1143/JJAP.31.L180
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