Oval defects in submicron GaAs and AIGaAs films grown by molecular beam epitaxy
- Author
- BUYANOV, A. V; LAURS, E. P; PEKA, G. P; SEMASHKO, E. M; TKACHENKO, V. N
Kiev radio works production enterprise, Kiev, Ussr - Source
Soviet physics. Solid state. 1991, Vol 33, Num 9, pp 1551-1553 ; ref : 4 ref
- ISSN
- 0038-5654
- Scientific domain
- Condensed state physics
- Publisher
- American Institute of Physics, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium Gallium Arséniure Mixte Cathodoluminescence Condensation faisceau moléculaire Couche mince Défaut cristallin Emission RX Epitaxie Etude expérimentale Gallium Arséniure Microscopie électronique balayage Mécanisme croissance Méthode phase vapeur Semiconducteur Silicium
- Keyword (en)
- Aluminium Gallium Arsenides Mixed Cathodoluminescence Molecular beam condensation Thin film Crystal defect X ray emission Epitaxy Experimental study Gallium Arsenides Scanning electron microscopy Growth mechanism Growth from vapor Semiconductor materials Silicon
- Keyword (es)
- Aluminio Galio Arseniuro Mixto Catodoluminiscencia Condensación haz molecular Capa fina Defecto cristalino Emisión RX Epitaxia Estudio experimental Galio Arseniuro Microscopía electrónica barrido Mecanismo crecimiento Método fase vapor Semiconductor(material) Silicio
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35J Surface and interface dynamics and vibrations
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5284184
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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