A semiconductor laser as a stable phase conjugate mirror for linewidth reduction of another semiconductor laser
- Author
- OHTSU, M; KOSHIISHI, I; TERAMACHI, Y
Tokyo inst. technology, graduate school Nagatsuta, Kanagawa 227, Japan - Source
Japanese journal of applied physics. 1990, Vol 29, Num 11, pp L2060-L2062 ; 2 ; ref : 11 ref
- CODEN
- JJAPA5
- ISSN
- 0021-4922
- Scientific domain
- Crystallography; Optics; Condensed state physics; Physics; Plasma physics
- Publisher
- Japanese journal of applied physics, Tokyo
- Publication country
- Japan
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium Gallium Arséniure Mixte Largeur raie spectrale Laser semiconducteur Mélange 4 ondes Réduction
- Keyword (en)
- Aluminium Gallium Arsenides Mixed Spectral line width Semiconductor laser Four wave mixing Reduction
- Keyword (es)
- Aluminio Galio Arseniuro Mixto Anchura raya espectral Laser semiconductor Mezcla 4 ondas Reducción
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B55 Lasers
- Discipline
- Physics : optics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5375873
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1143/JJAP.29.L2060 
https://dx.doi.org/10.1143/JJAP.29.L2060
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