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Positron annihilation in defective Ga2S3 and Ga2Se3 crystals doped with transition and rare-earth elements

Author
ASKEROV, I. M; MASTEROV, V. F; KONDRAT'EV, V. N; BINNATOV, K. G; ASLANOV, G. K; MEKHRABOV, A. O; GADZHIEV, KH. F
Azerbaidzhan structural eng. inst., Baku, Ussr
Source

Soviet physics. Solid state. 1991, Vol 33, Num 12, pp 1954-1956 ; ref : 6 ref

ISSN
0038-5654
Scientific domain
Condensed state physics
Publisher
American Institute of Physics, New York, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Annihilation positon Composé minéral Distribution angulaire Dopage Durée vie Etude expérimentale Europium Fer Gallium Sulfure Gallium Séléniure Manganèse Piégeage porteur charge
Keyword (en)
Positron annihilation Inorganic compound Angular distribution Doping Lifetime Experimental study Europium Iron Gallium Sulfides Gallium Selenides Manganese Charge carrier trapping
Keyword (es)
Aniquilación positón Compuesto inorgánico Distribución angular Doping Tiempo vida Estudio experimental Europio Hierro Galio Sulfuro Galio Seleniuro Manganeso Captura portador carga
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A60 Positron states

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
5399494

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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