Photoluminescence study of Li- and Na-implanted ZnSe epitaxial layers grown by atmospheric pressure metalorganic vapor-phase epitaxy
- Author
- YODO, T; UEDA, K; MORIO, K; YAMASHITA, K; TANAKA, S
Nippon Sheet Glass Co., Ltd, Tsukuba res. lab., Tsukuba-city, Ibaraki-prefecture 300-26, Japan - Source
Journal of applied physics. 1990, Vol 68, Num 7, pp 3212-3220 ; ref : 20 ref
- CODEN
- JAPIAU
- ISSN
- 0021-8979
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Publisher
- American Institute of Physics, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Basse température Composé organométallique Dopage Epitaxie Implantation ion Photoluminescence Pression atmosphérique Recuit Sélénium Zinc
- Keyword (en)
- Low temperature Organometallic compound Doping Epitaxy Ion implantation Photoluminescence Atmospheric pressure Annealing Selenium Zinc
- Keyword (es)
- Baja temperatura Compuesto organometálico Doping Epitaxia Implantación ión Fotoluminiscencia Presión atmosférica Recocido Selenio Zinc
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 5538199
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.346372 
https://dx.doi.org/10.1063/1.346372
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