Positron states at vancancy-impurity pairs in semiconductors
- Author
- MAKINEN, S1 ; PUSKA, M. J
[1] Univ. Jyväskylä, dep. physics, Jyväskylä 40100, Finland - Source
Physical review. B, Condensed matter. 1989, Vol 40, Num 18, pp 12523-12526 ; ref : 28 ref
- CODEN
- PRBMDO
- ISSN
- 0163-1829
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- American Institute of Physics, Woodbury, NY
/
American Physical Society, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Annihilation positon Approximation densité locale Densité électron Durée vie Défaut complexe Etude théorique Lacune Positon Semiconducteur Structure électronique
- Keyword (en)
- Positron annihilation Local density approximation Electron density Lifetime Complex defect Theoretical study Vacancy Positron Semiconductor materials Electronic structure
- Keyword (es)
- Aniquilación positón Aproximación densidad local Densidad electrón Tiempo vida Defecto complejo Estudio teórico Cavidad Positrón Semiconductor(material) Estructura electrónica
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A60 Positron states
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 6784406
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1103/PhysRevB.40.12523 
https://dx.doi.org/10.1103/PhysRevB.40.12523
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