Positron states in Si and GaAs
- Author
- PUSKA, M. J1 ; CORBEL, C
[1] Univ. Jyväskylä, dep. physics, Jyvaskylä 40100, Finland - Source
Physical review. B, Condensed matter. 1988, Vol 38, Num 14, pp 9874-9880 ; ref : 24 ref
- CODEN
- PRBMDO
- ISSN
- 0163-1829
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- American Institute of Physics, Woodbury, NY
/
American Physical Society, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Amas lacune Annihilation positon Composé minéral Durée vie Etat localisé Etude théorique Fonction onde Gallium Arséniure Positon Semiconducteur Silicium
- Keyword (en)
- Vacancy cluster Positron annihilation Inorganic compound Lifetime Localized state Theoretical study Wave function Gallium Arsenides Positron Semiconductor materials Silicon
- Keyword (es)
- Montón laguna Aniquilación positón Compuesto inorgánico Tiempo vida Estado localizado Estudio teórico Función onda Galio Positrón Semiconductor(material) Silicio
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A60 Positron states
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 6799835
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1103/PhysRevB.38.9874 
https://dx.doi.org/10.1103/PhysRevB.38.9874
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