Frequency dependent electrical transport in bismuth-modified amorphous germanium sulfide semiconductors
- Author
- BHATNAGAR, V. K1 ; BHATIA, K. L
[1] Maharashi Dayanand univ. , dep. physics, Rohtak Haryana 124001, India - Source
Journal of non-crystalline solids. 1990, Vol 119, Num 2, pp 214-231 ; ref : 28 ref
- CODEN
- JNCSBJ
- ISSN
- 0022-3093
- Scientific domain
- Crystallography; Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Amas Basse température Bipolaron Composition chimique Composé minéral Conductivité optique Conductivité saut Conductivité électrique Constante diélectrique Défaut Etat amorphe Etude expérimentale Haute température Métal transition Composé Polaron Température Système bismuth germanium manganèse soufre Système bismuth germanium soufre
- Keyword (en)
- Cluster Low temperature Bipolaron Chemical composition Inorganic compound Optical conductivity Hopping conductivity Electrical conductivity Permittivity Defect Amorphous state Experimental study High temperature Transition metal Compounds Polaron Temperature
- Keyword (es)
- Montón Baja temperatura Bipolarón Composición química Compuesto inorgánico Conductividad óptica Conductividad salto Conductividad eléctrica Constante dieléctrica Defecto Estado amorfo Estudio experimental Alta temperatura Metal transición Polarón Temperatura
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B20 Conductivity phenomena in semiconductors and insulators
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 6850071
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0022-3093(90)90845-D 
https://dx.doi.org/10.1016/0022-3093(90)90845-D
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