Complex conductivity in the presence of long range potential fluctuations. Application to the determination of the gap state density in undoped and boron doped a-Si: H films grown by CVD
- Author
- ROCHE, F. M1 ; PISTOULET, B; SOEGANDI, T
[1] Lab. automatique microélectronique Montpellier, Montpellier 34060, France - Source
Journal de physique (Paris). 1988, Vol 49, Num 11, pp 1933-1950 ; ref : 40 ref
- CODEN
- JOPQAG
- ISSN
- 0302-0738
- Scientific domain
- Crystallography; Atomic molecular physics; Condensed state physics; Physics
- Publisher
- Société française de physique, Paris
- Publication country
- France
- Document type
- Article
- Language
- English
- Keyword (fr)
- Bande interdite Bore Compensation Conductivité électrique Constante diélectrique Couche mince Densité état Dopage Etat amorphe Etude théorique Fluctuation Fréquence Méthode mesure Niveau profond Potentiel longue portée Semiconducteur Température Système hydrogène silicium
- Keyword (en)
- Energy gap Boron Compensation Electrical conductivity Permittivity Thin film Density of states Doping Amorphous state Theoretical study Fluctuations Frequency Measurement method Deep level Long range potential Semiconductor materials Temperature
- Keyword (es)
- Banda prohibida Boro Compensación Conductividad eléctrica Constante dieléctrica Capa fina Densidad estado Doping Estado amorfo Estudio teórico Fluctuación Frecuencia Método medida Nivel profundo Potencial largo alcance Semiconductor(material) Temperatura
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B20 Conductivity phenomena in semiconductors and insulators
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7242482
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1051/jphys:0198800490110193300 
https://dx.doi.org/10.1051/jphys:0198800490110193300
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