Study of interface states in the metal-semiconductor junction using deep level transient spectroscopy
- Author
- HAN ZHANG1 ; AOYAGI, Y; IWAI, S; NAMBA, S
[1] Inst. physical chemical res., Wako-shi Saitama 351-01, Japan - Source
Applied physics letters. 1987, Vol 50, Num 6, pp 341-343 ; ref : 16 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium Contact métal semiconducteur Contact électrique Etat électronique interface Gallium Arséniure Niveau énergie Spectrométrie
- Keyword (en)
- Aluminium Semiconductor metal contact Electric contact Interface electron state Gallium Arsenides Energy level Spectrometry
- Keyword (es)
- Aluminio Contacto metal semiconductor Contacto eléctrico Estado electrónico interfase Galio Nivel energía Espectrometría
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7393968
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.98194 
https://dx.doi.org/10.1063/1.98194
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