A method to improve the speed and sensitivity of constant-capacitance voltage transient measurements
- Author
- JENG-JYE SHIAU1 ; FAHRENBRUCH, A. L; BUBE, R. H
[1] Stanford univ., dep. materials sci. eng., Stanford CA 94305, United States - Source
Solid-state electronics. 1987, Vol 30, Num 5, pp 513-518 ; ref : 18 ref
- ISSN
- 0038-1101
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Oxford
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Cadmium Tellurure Etude expérimentale Méthode mesure Niveau défaut cristallin Niveau profond Phénomène transitoire Semiconducteur Sensibilité Spectrométrie capacitive Spectrométrie transitoire niveau profond Capacité constante Niveau défaut Tension électrique variable
- Keyword (en)
- Cadmium Tellurides Defect level Experimental study Measurement method Crystal defect level Deep level Transients Semiconductor materials Sensitivity Capacitive spectrometry Deep level transient spectrometry
- Keyword (es)
- Cadmio Estudio experimental Método medida Nivel defecto cristalino Nivel profundo Fenómeno transitorio Semiconductor(material) Sensibilidad Espectrometría capacitiva Espectrometría transitoria nivel profundo
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A60 Positron states
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7429064
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0038-1101(87)90206-1 
https://dx.doi.org/10.1016/0038-1101(87)90206-1
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