Puissance d'émission stimulée de trous chauds dans Ge-p en champs E⊥H
- Author
- VOROB'EV, L. E1 ; DANILOV, S. N; STAFEEV, V. I
[1] Leningradskij politekh. inst. im. M.I. Kalinina, Ussr - Source
Fizika i tehnika poluprovodnikov. = Physics and technics of semiconductors. 1987, Vol 21, Num 9, pp 1707-1710 ; ref : 9 ref
- CODEN
- FTPPA4
- ISSN
- 0015-3222
- Scientific domain
- Electronics; Condensed state physics
- Publisher
- Nauka, Sankt-Peterburg
- Publication country
- Russian Federation
- Document type
- Article
- Language
- Russian
- Keyword (fr)
- Champ croisé Champ magnétique Champ électrique Conductivité type p Emission stimulée Etude expérimentale Germanium Porteur chaud Semiconducteur Trou
- Keyword (en)
- Crossed fields Magnetic field Electric field P type conductivity Stimulated emission Experimental study Germanium Hot carrier Semiconductor materials Hole
- Keyword (es)
- Campo cruzado Campo magnético Campo eléctrico Conductividad tipo p Emisión estimulada Estudio experimental Germanio Portador caliente Semiconductor(material) Hoyo
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H45 Stimulated emission
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 7515153
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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