Propriétés électrophysiques de la solution solide SiGe dopée par neutrons du côté des compositions riches en silicium. II. Propriétés galvanomagnétiques et hétérogénéités
- Author
- ZABRODSKIJ, A. G1 ; EVSEEV, V. A; KONOPLEVA, R. F; CHEKANOV, V. A; YUROVA, E. S; FEDOROV, V. V; SAIDOV, M. S; YUSUPOV, A; ATABAEV, I. G
[1] An SSSR, fiziko-tekh. inst. im. A.F. Ioffe, Leningrad, Ussr - Source
Fizika i tehnika poluprovodnikov. = Physics and technics of semiconductors. 1986, Vol 20, Num 11, pp 2052-2060 ; ref : 12 ref
- CODEN
- FTPPA4
- ISSN
- 0015-3222
- Scientific domain
- Electronics; Condensed state physics
- Publisher
- Nauka, Sankt-Peterburg
- Publication country
- Russian Federation
- Document type
- Article
- Language
- Russian
- Keyword (fr)
- Compensation charge Composition chimique Composé minéral Concentration impureté Conductivité impureté Conductivité type p Dopage Gallium Germanium Hétérogénéité Ionisation impureté Irradiation Magnétoconductivité Mobilité Hall Neutron Réaction nucléaire Semiconducteur Silicium Solution solide
- Keyword (en)
- Charge compensation Chemical composition Inorganic compound Impurity density Impurity conductivity P type conductivity Doping Gallium Germanium Heterogeneity Impurity ionization Irradiation Magnetoconductivity Hall mobility Neutrons Nuclear reaction Semiconductor materials Silicon Solid solution
- Keyword (es)
- Compensación carga Composicion quimica Compuesto mineral Concentración impureza Conductividad impureza Conductividad tipo p Doping Galio Germanio Heterogeneidad Ionización impureza Irradiacion Magnetoconductividad Movilidad Hall Neutron Reacción nuclear Semiconductor(material) Silicio Solución sólida
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B20 Conductivity phenomena in semiconductors and insulators / 001B70B20M Galvanomagnetic and other magnetotransport effects
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 8055043
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:184:\"Propri\u00e9t\u00e9s \u00e9lectrophysiques de la solution solide SiGe dop\u00e9e par neutrons du c\u00f4t\u00e9 des compositions riches en silicium. II. Propri\u00e9t\u00e9s galvanomagn\u00e9tiques et h\u00e9t\u00e9rog\u00e9n\u00e9it\u00e9s\";s:9:\"\u0000*\u0000jtitle\";s:32:\"Fizika i tehnika poluprovodnikov\";s:9:\"\u0000*\u0000stitle\";s:21:\"Fiz. teh. poluprovodn\";s:7:\"\u0000*\u0000date\";s:4:\"1986\";s:9:\"\u0000*\u0000volume\";s:2:\"20\";s:8:\"\u0000*\u0000issue\";s:2:\"11\";s:8:\"\u0000*\u0000spage\";s:4:\"2052\";s:8:\"\u0000*\u0000epage\";s:4:\"2060\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0015-3222\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:10:\"ZABRODSKIJ\";s:10:\"\u0000*\u0000aufirst\";s:4:\"A. G\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:8:{i:0;s:12:\"EVSEEV, V. A\";i:1;s:15:\"KONOPLEVA, R. F\";i:2;s:14:\"CHEKANOV, V. A\";i:3;s:12:\"YUROVA, E. S\";i:4;s:13:\"FEDOROV, V. V\";i:5;s:12:\"SAIDOV, M. S\";i:6;s:10:\"YUSUPOV, A\";i:7;s:13:\"ATABAEV, I. G\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"FTPPA4\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:184:\"Propri\u00e9t\u00e9s \u00e9lectrophysiques de la solution solide SiGe dop\u00e9e par neutrons du c\u00f4t\u00e9 des compositions riches en silicium. II. Propri\u00e9t\u00e9s galvanomagn\u00e9tiques et h\u00e9t\u00e9rog\u00e9n\u00e9it\u00e9s\";s:8:\"\u0000*\u0000place\";s:15:\"Sankt-Peterburg\";s:6:\"\u0000*\u0000pub\";s:5:\"Nauka\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:184:\"Propri\u00e9t\u00e9s \u00e9lectrophysiques de la solution solide SiGe dop\u00e9e par neutrons du c\u00f4t\u00e9 des compositions riches en silicium. II. Propri\u00e9t\u00e9s galvanomagn\u00e9tiques et h\u00e9t\u00e9rog\u00e9n\u00e9it\u00e9s\";s:9:\"\u0000*\u0000jtitle\";s:32:\"Fizika i tehnika poluprovodnikov\";s:9:\"\u0000*\u0000stitle\";s:21:\"Fiz. teh. poluprovodn\";s:7:\"\u0000*\u0000date\";s:4:\"1986\";s:9:\"\u0000*\u0000volume\";s:2:\"20\";s:8:\"\u0000*\u0000issue\";s:2:\"11\";s:8:\"\u0000*\u0000spage\";s:4:\"2052\";s:8:\"\u0000*\u0000epage\";s:4:\"2060\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0015-3222\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:10:\"ZABRODSKIJ\";s:10:\"\u0000*\u0000aufirst\";s:4:\"A. G\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:8:{i:0;s:12:\"EVSEEV, V. A\";i:1;s:15:\"KONOPLEVA, R. F\";i:2;s:14:\"CHEKANOV, V. A\";i:3;s:12:\"YUROVA, E. S\";i:4;s:13:\"FEDOROV, V. V\";i:5;s:12:\"SAIDOV, M. S\";i:6;s:10:\"YUSUPOV, A\";i:7;s:13:\"ATABAEV, I. G\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"FTPPA4\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:184:\"Propri\u00e9t\u00e9s \u00e9lectrophysiques de la solution solide SiGe dop\u00e9e par neutrons du c\u00f4t\u00e9 des compositions riches en silicium. II. Propri\u00e9t\u00e9s galvanomagn\u00e9tiques et h\u00e9t\u00e9rog\u00e9n\u00e9it\u00e9s\";s:8:\"\u0000*\u0000place\";s:15:\"Sankt-Peterburg\";s:6:\"\u0000*\u0000pub\";s:5:\"Nauka\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:184:\"Propri\u00e9t\u00e9s \u00e9lectrophysiques de la solution solide SiGe dop\u00e9e par neutrons du c\u00f4t\u00e9 des compositions riches en silicium. II. Propri\u00e9t\u00e9s galvanomagn\u00e9tiques et h\u00e9t\u00e9rog\u00e9n\u00e9it\u00e9s\";s:9:\"\u0000*\u0000jtitle\";s:32:\"Fizika i tehnika poluprovodnikov\";s:9:\"\u0000*\u0000stitle\";s:21:\"Fiz. teh. poluprovodn\";s:7:\"\u0000*\u0000date\";s:4:\"1986\";s:9:\"\u0000*\u0000volume\";s:2:\"20\";s:8:\"\u0000*\u0000issue\";s:2:\"11\";s:8:\"\u0000*\u0000spage\";s:4:\"2052\";s:8:\"\u0000*\u0000epage\";s:4:\"2060\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0015-3222\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:10:\"ZABRODSKIJ\";s:10:\"\u0000*\u0000aufirst\";s:4:\"A. G\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:8:{i:0;s:12:\"EVSEEV, V. A\";i:1;s:15:\"KONOPLEVA, R. F\";i:2;s:14:\"CHEKANOV, V. A\";i:3;s:12:\"YUROVA, E. S\";i:4;s:13:\"FEDOROV, V. V\";i:5;s:12:\"SAIDOV, M. S\";i:6;s:10:\"YUSUPOV, A\";i:7;s:13:\"ATABAEV, I. G\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"FTPPA4\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:184:\"Propri\u00e9t\u00e9s \u00e9lectrophysiques de la solution solide SiGe dop\u00e9e par neutrons du c\u00f4t\u00e9 des compositions riches en silicium. II. Propri\u00e9t\u00e9s galvanomagn\u00e9tiques et h\u00e9t\u00e9rog\u00e9n\u00e9it\u00e9s\";s:8:\"\u0000*\u0000place\";s:15:\"Sankt-Peterburg\";s:6:\"\u0000*\u0000pub\";s:5:\"Nauka\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:184:\"Propri\u00e9t\u00e9s \u00e9lectrophysiques de la solution solide SiGe dop\u00e9e par neutrons du c\u00f4t\u00e9 des compositions riches en silicium. II. Propri\u00e9t\u00e9s galvanomagn\u00e9tiques et h\u00e9t\u00e9rog\u00e9n\u00e9it\u00e9s\";s:9:\"\u0000*\u0000jtitle\";s:32:\"Fizika i tehnika poluprovodnikov\";s:9:\"\u0000*\u0000stitle\";s:21:\"Fiz. teh. poluprovodn\";s:7:\"\u0000*\u0000date\";s:4:\"1986\";s:9:\"\u0000*\u0000volume\";s:2:\"20\";s:8:\"\u0000*\u0000issue\";s:2:\"11\";s:8:\"\u0000*\u0000spage\";s:4:\"2052\";s:8:\"\u0000*\u0000epage\";s:4:\"2060\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0015-3222\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:10:\"ZABRODSKIJ\";s:10:\"\u0000*\u0000aufirst\";s:4:\"A. G\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:8:{i:0;s:12:\"EVSEEV, V. A\";i:1;s:15:\"KONOPLEVA, R. F\";i:2;s:14:\"CHEKANOV, V. A\";i:3;s:12:\"YUROVA, E. S\";i:4;s:13:\"FEDOROV, V. V\";i:5;s:12:\"SAIDOV, M. S\";i:6;s:10:\"YUSUPOV, A\";i:7;s:13:\"ATABAEV, I. G\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"FTPPA4\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:184:\"Propri\u00e9t\u00e9s \u00e9lectrophysiques de la solution solide SiGe dop\u00e9e par neutrons du c\u00f4t\u00e9 des compositions riches en silicium. II. Propri\u00e9t\u00e9s galvanomagn\u00e9tiques et h\u00e9t\u00e9rog\u00e9n\u00e9it\u00e9s\";s:8:\"\u0000*\u0000place\";s:15:\"Sankt-Peterburg\";s:6:\"\u0000*\u0000pub\";s:5:\"Nauka\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:184:\"Propri\u00e9t\u00e9s \u00e9lectrophysiques de la solution solide SiGe dop\u00e9e par neutrons du c\u00f4t\u00e9 des compositions riches en silicium. II. Propri\u00e9t\u00e9s galvanomagn\u00e9tiques et h\u00e9t\u00e9rog\u00e9n\u00e9it\u00e9s\";s:9:\"\u0000*\u0000jtitle\";s:32:\"Fizika i tehnika poluprovodnikov\";s:9:\"\u0000*\u0000stitle\";s:21:\"Fiz. teh. poluprovodn\";s:7:\"\u0000*\u0000date\";s:4:\"1986\";s:9:\"\u0000*\u0000volume\";s:2:\"20\";s:8:\"\u0000*\u0000issue\";s:2:\"11\";s:8:\"\u0000*\u0000spage\";s:4:\"2052\";s:8:\"\u0000*\u0000epage\";s:4:\"2060\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0015-3222\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:10:\"ZABRODSKIJ\";s:10:\"\u0000*\u0000aufirst\";s:4:\"A. G\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:8:{i:0;s:12:\"EVSEEV, V. A\";i:1;s:15:\"KONOPLEVA, R. F\";i:2;s:14:\"CHEKANOV, V. A\";i:3;s:12:\"YUROVA, E. S\";i:4;s:13:\"FEDOROV, V. V\";i:5;s:12:\"SAIDOV, M. S\";i:6;s:10:\"YUSUPOV, A\";i:7;s:13:\"ATABAEV, I. G\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"FTPPA4\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:184:\"Propri\u00e9t\u00e9s \u00e9lectrophysiques de la solution solide SiGe dop\u00e9e par neutrons du c\u00f4t\u00e9 des compositions riches en silicium. II. Propri\u00e9t\u00e9s galvanomagn\u00e9tiques et h\u00e9t\u00e9rog\u00e9n\u00e9it\u00e9s\";s:8:\"\u0000*\u0000place\";s:15:\"Sankt-Peterburg\";s:6:\"\u0000*\u0000pub\";s:5:\"Nauka\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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