Modulation de la charge d'espace des structures isolant-semiconducteur obtenues dans le système GaAs-AlAs
- Author
- IL'ICHEV, EH. A; POLTORATSKIJ, EH. A
- Source
Fizika i tehnika poluprovodnikov. = Physics and technics of semiconductors. 1986, Vol 20, Num 10, pp 1782-1786 ; ref : 9 ref
- CODEN
- FTPPA4
- ISSN
- 0015-3222
- Scientific domain
- Electronics; Condensed state physics
- Publisher
- Nauka, Sankt-Peterburg
- Publication country
- Russian Federation
- Document type
- Article
- Language
- Russian
- Keyword (fr)
- Aluminium Gallium Arséniure Mixte Transistor effet champ grille isolée Transistor effet champ
- Keyword (en)
- Aluminium Gallium Arsenides Mixed Isolated gate field effect transistor Field effect transistor
- Keyword (es)
- Aluminio Transistor efecto campo rejilla aislada Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 8330615
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:106:\"Modulation de la charge d'espace des structures isolant-semiconducteur obtenues dans le syst\u00e8me GaAs-AlAs\";s:9:\"\u0000*\u0000jtitle\";s:32:\"Fizika i tehnika poluprovodnikov\";s:9:\"\u0000*\u0000stitle\";s:21:\"Fiz. teh. poluprovodn\";s:7:\"\u0000*\u0000date\";s:4:\"1986\";s:9:\"\u0000*\u0000volume\";s:2:\"20\";s:8:\"\u0000*\u0000issue\";s:2:\"10\";s:8:\"\u0000*\u0000spage\";s:4:\"1782\";s:8:\"\u0000*\u0000epage\";s:4:\"1786\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0015-3222\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"IL'ICHEV\";s:10:\"\u0000*\u0000aufirst\";s:5:\"EH. A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:19:\"POLTORATSKIJ, EH. A\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"FTPPA4\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:106:\"Modulation de la charge d'espace des structures isolant-semiconducteur obtenues dans le syst\u00e8me GaAs-AlAs\";s:8:\"\u0000*\u0000place\";s:15:\"Sankt-Peterburg\";s:6:\"\u0000*\u0000pub\";s:5:\"Nauka\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:106:\"Modulation de la charge d'espace des structures isolant-semiconducteur obtenues dans le syst\u00e8me GaAs-AlAs\";s:9:\"\u0000*\u0000jtitle\";s:32:\"Fizika i tehnika poluprovodnikov\";s:9:\"\u0000*\u0000stitle\";s:21:\"Fiz. teh. poluprovodn\";s:7:\"\u0000*\u0000date\";s:4:\"1986\";s:9:\"\u0000*\u0000volume\";s:2:\"20\";s:8:\"\u0000*\u0000issue\";s:2:\"10\";s:8:\"\u0000*\u0000spage\";s:4:\"1782\";s:8:\"\u0000*\u0000epage\";s:4:\"1786\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0015-3222\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"IL'ICHEV\";s:10:\"\u0000*\u0000aufirst\";s:5:\"EH. A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:19:\"POLTORATSKIJ, EH. A\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"FTPPA4\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:106:\"Modulation de la charge d'espace des structures isolant-semiconducteur obtenues dans le syst\u00e8me GaAs-AlAs\";s:8:\"\u0000*\u0000place\";s:15:\"Sankt-Peterburg\";s:6:\"\u0000*\u0000pub\";s:5:\"Nauka\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:106:\"Modulation de la charge d'espace des structures isolant-semiconducteur obtenues dans le syst\u00e8me GaAs-AlAs\";s:9:\"\u0000*\u0000jtitle\";s:32:\"Fizika i tehnika poluprovodnikov\";s:9:\"\u0000*\u0000stitle\";s:21:\"Fiz. teh. poluprovodn\";s:7:\"\u0000*\u0000date\";s:4:\"1986\";s:9:\"\u0000*\u0000volume\";s:2:\"20\";s:8:\"\u0000*\u0000issue\";s:2:\"10\";s:8:\"\u0000*\u0000spage\";s:4:\"1782\";s:8:\"\u0000*\u0000epage\";s:4:\"1786\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0015-3222\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"IL'ICHEV\";s:10:\"\u0000*\u0000aufirst\";s:5:\"EH. A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:19:\"POLTORATSKIJ, EH. A\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"FTPPA4\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:106:\"Modulation de la charge d'espace des structures isolant-semiconducteur obtenues dans le syst\u00e8me GaAs-AlAs\";s:8:\"\u0000*\u0000place\";s:15:\"Sankt-Peterburg\";s:6:\"\u0000*\u0000pub\";s:5:\"Nauka\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:106:\"Modulation de la charge d'espace des structures isolant-semiconducteur obtenues dans le syst\u00e8me GaAs-AlAs\";s:9:\"\u0000*\u0000jtitle\";s:32:\"Fizika i tehnika poluprovodnikov\";s:9:\"\u0000*\u0000stitle\";s:21:\"Fiz. teh. poluprovodn\";s:7:\"\u0000*\u0000date\";s:4:\"1986\";s:9:\"\u0000*\u0000volume\";s:2:\"20\";s:8:\"\u0000*\u0000issue\";s:2:\"10\";s:8:\"\u0000*\u0000spage\";s:4:\"1782\";s:8:\"\u0000*\u0000epage\";s:4:\"1786\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0015-3222\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"IL'ICHEV\";s:10:\"\u0000*\u0000aufirst\";s:5:\"EH. A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:19:\"POLTORATSKIJ, EH. A\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"FTPPA4\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:106:\"Modulation de la charge d'espace des structures isolant-semiconducteur obtenues dans le syst\u00e8me GaAs-AlAs\";s:8:\"\u0000*\u0000place\";s:15:\"Sankt-Peterburg\";s:6:\"\u0000*\u0000pub\";s:5:\"Nauka\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:106:\"Modulation de la charge d'espace des structures isolant-semiconducteur obtenues dans le syst\u00e8me GaAs-AlAs\";s:9:\"\u0000*\u0000jtitle\";s:32:\"Fizika i tehnika poluprovodnikov\";s:9:\"\u0000*\u0000stitle\";s:21:\"Fiz. teh. poluprovodn\";s:7:\"\u0000*\u0000date\";s:4:\"1986\";s:9:\"\u0000*\u0000volume\";s:2:\"20\";s:8:\"\u0000*\u0000issue\";s:2:\"10\";s:8:\"\u0000*\u0000spage\";s:4:\"1782\";s:8:\"\u0000*\u0000epage\";s:4:\"1786\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0015-3222\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"IL'ICHEV\";s:10:\"\u0000*\u0000aufirst\";s:5:\"EH. A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:19:\"POLTORATSKIJ, EH. A\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"FTPPA4\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:106:\"Modulation de la charge d'espace des structures isolant-semiconducteur obtenues dans le syst\u00e8me GaAs-AlAs\";s:8:\"\u0000*\u0000place\";s:15:\"Sankt-Peterburg\";s:6:\"\u0000*\u0000pub\";s:5:\"Nauka\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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