Dipole-induced changes of the band discontinuities at the SiO2-Si interface
- Author
- PERFETTI, P1 ; QUARESIMA, C; COLUZZA, C; FORTUNATO, C; MARGARITONDO, G
[1] Ist. struttura materia, Frascati 00044, Italy - Source
Physical review letters. 1986, Vol 57, Num 16, pp 2065-2068 ; ref : 25 ref
- CODEN
- PRLTAO
- ISSN
- 0031-9007
- Scientific domain
- Optics; Atomic molecular physics; Condensed state physics; Physics; Plasma physics
- Publisher
- American Physical Society, Ridge, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Couche transition Césium Hydrogène Interface Semiconducteur Silicium Oxyde Silicium Structure bande
- Keyword (en)
- Transition layer Cesium Hydrogen Interface Semiconductor materials Silicon Oxides Silicon Band structure
- Keyword (es)
- Capa transición Cesio Hidrógeno Interface Semiconductor(material) Silicio Silicio Estructura banda
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 8330639
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1103/PhysRevLett.57.2065 
https://dx.doi.org/10.1103/PhysRevLett.57.2065
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