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A new design-centering methodology for VLSI device development

Author
AOKI, Y1 ; MASUDA, H; SHIMADA, S; SATO, S
[1] Hitachi ltd., cent. res. lab., Tokyo 185, Japan
Source

IEEE transactions on computer-aided design of integrated circuits and systems. 1987, Vol 6, Num 3, pp 452-461 ; ref : 3 ref

CODEN
ITCSDI
ISSN
0278-0070
Scientific domain
Electronics
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Circuit VLSI Circuit intégré Conception assistée Modèle 2 dimensions Méthode analytique Méthodologie Optimisation Performance Simulation Technologie MOS Transistor effet champ
Keyword (en)
VLSI circuit Integrated circuit Computer aided design Two dimensional model Analytical method Methodology Optimization Performance Simulation MOS technology Field effect transistor
Keyword (es)
Circuito VLSI Circuito integrado Concepción asistida Modelo 2 dimensiones Método analítico Metodologia Optimizacion Rendimiento Simulacion Tecnología MOS Transistor efecto campo
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
8333404

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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