Etude expérimentale de la diffusion des électrons d'énergie 760 MeV par le cristal de silicium
- Author
- ADEJSHVILI, D. I1 ; ANTIPENKO, A. P; BLAZHEVICH, S. V; BOCHEK, G. L; VIT'KO, V. I; MOROKHOVSKIJ, V. L; SHRAMENKO, B. I
[1] Khar'kovskij fiz.-tekh. inst., Ukraine - Source
ZETF. Pis′ma v redakciû. 1987, Vol 92, Num 5, pp 1574-1577 ; ref : 10 ref
- ISSN
- 0044-4510
- Scientific domain
- Crystallography; Metallurgy, welding; Atomic molecular physics; Condensed state physics; Physics
- Publisher
- Nauka, Moskva
- Publication country
- Ussr
- Document type
- Article
- Language
- Russian
- Keyword (fr)
- Cohérence Diffusion Electron ultrarelativiste Etude expérimentale Monocristal Orientation Semiconducteur Silicium Variation angulaire
- Keyword (en)
- Coherence Diffusion Ultrarelativistic electron Experimental study Single crystal Orientation Semiconductor materials Silicon Angular variation
- Keyword (es)
- Coherencia Difusion Electrón ultrarrelativista Estudio experimental Monocristal Orientacion Semiconductor(material) Silicio Variación angular
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70I Electron and ion emission by liquids and solids; impact phenomena / 001B70I20 Impact phenomena (including electron spectra and sputtering) / 001B70I20K Other electron-impact emission phenomena
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 8337291
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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