Elastic relaxation in transmission electron microscopy of strained-layer superlattices
- Author
- GIBSON, J. M; HULL, R; BEAN, J. C
AT&T Bell Laboratories - Source
Applied physics letters. 1985, Vol 46, Num 7, pp 649-651 ; ref : 10 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Composition chimique Couche mince Couche multiple Epitaxie Etude expérimentale Germanium Microscopie fond sombre Microscopie électronique transmission Propriété élastique Relaxation structurale Relaxation Silicium Solution solide Superréseau Support Si Système binaire
- Keyword (en)
- Chemical composition Thin film Multiple layer Epitaxy Experimental study Germanium Dark field microscopy Transmission electron microscopy Elastic properties Structure relaxation Relaxation Silicon Solid solution Superlattice Binary system
- Keyword (es)
- Composicion quimica Estudio experimental Microscopia electronica transmision
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H60 Physical properties of thin films, nonelectronic
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 8405006
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.95516 
https://dx.doi.org/10.1063/1.95516
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