Effect of annealing on chemical state of phosphorus in SiO2 films
- Author
- WU, O. K. T; SAXENA, A. N
Gould res. center - Source
Journal of the Electrochemical Society. 1985, Vol 132, Num 4, pp 932-936 ; ref : 13 ref
- CODEN
- JESOAN
- ISSN
- 0013-4651
- Scientific domain
- General chemistry, physical chemistry; Crystallography; Electrical engineering; Condensed state physics
- Publisher
- Electrochemical Society, Pennington, NJ
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Composé minéral Dépôt chimique phase vapeur Etude expérimentale Impureté Liaison chimique Phosphore Rayon X Recuit Silicium Oxyde Spectre photoélectron Spectrométrie Auger
- Keyword (en)
- Inorganic compound Chemical vapor deposition Experimental study Impurity Chemical bond Phosphorus X ray Annealing Silicon Oxides Photoelectron spectrum Auger electron spectrometry
- Keyword (es)
- Estudio experimental Rayos X
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H60 Physical properties of thin films, nonelectronic
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 8439961
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1149/1.2113988 
https://dx.doi.org/10.1149/1.2113988
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