Studies of the deep levels in p-type InSb under pressure
- Other title
- Studien der tiefen Niveaus in p-InSb unter Druck (de)
- Author
- ALADASHVILI, D.I; KONCZEWICZ, L; POROWSKI, S
Tbilisskij Gosudarstvennyj Univ. Fizicheskij Fakuĺtet - Source
Physica status solidi. A. Applied research. 1984, Vol 86, Num 1, pp 301-308 ; ref : 24 ref
- CODEN
- PSSABA
- ISSN
- 0031-8965
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Wiley-VCH, Berlin
- Publication country
- Germany
- Document type
- Article
- Language
- English
- Keyword (fr)
- Composé intermétallique Densité trou Effet Hall InSb Pression Semiconducteur
- Keyword (en)
- Intermetallic compound Hole density Hall effect Pressure Semiconductor
- Keyword (de)
- Intermetallische Verbindung Loecherdichte Hall Effekt Druck Halbleiter
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B15 Electronic conduction in metals and alloys
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- WELAND
- Database
- PASCAL
- INIST identifier
- 8558730
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1002/pssa.2210860133 
https://dx.doi.org/10.1002/pssa.2210860133
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