Ion implantation into GaN
- Author
- KUCHEYEV, S. O1 ; WILLIAMS, J. S1 ; PEARTON, S. J2
[1] Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia
[2] Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, United States - Source
Materials science & engineering. R, Reports. 2001, Vol 33, Num 2-3, pp 51-107 ; ref : 159 ref
- ISSN
- 0927-796X
- Scientific domain
- Crystallography; Mechanics acoustics; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier Science, Lausanne
- Publication country
- Switzerland
- Document type
- Article
- Language
- English
- Keyword (fr)
- Amorphisation Cathodoluminescence Conductivité électrique Distribution impureté Dopage Dureté Défaut cristallin Effet physique rayonnement Endommagement Energie activation Equation Arrhenius Erosion Etat surface Extinction luminescence Faisceau ion Gallium nitrure Implantation ion Matériau semiconducteur Microscopie force atomique Porosité Propriété mécanique Propriété optique RBS Recristallisation Résistivité couche Spectre absorption TEM Ga N GaN
- Keyword (en)
- Amorphization Cathodoluminescence Electrical conductivity Impurity distribution Doping Hardness Crystal defects Physical radiation effects Damage Activation energy Arrhenius equation Erosion Surface states Luminescence quenching Ion beams Gallium nitrides Ion implantation Semiconductor materials Atomic force microscopy Porosity Mechanical properties Optical properties RBS Recrystallization Sheet resistivity Absorption spectra TEM
- Keyword (es)
- Doping Extinción luminiscencia
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72V Doping and impurity implantation in iii-v and ii-vi semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A80 Physical radiation effects, radiation damage / 001B60A80J Ion radiation effects
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A40 Treatment of materials and its effects on microstructure and properties / 001B80A40W Radiation treatments
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 978579
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0927-796X(01)00028-6 
https://dx.doi.org/10.1016/S0927-796X(01)00028-6
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