A THEORETICAL INVESTIGATION ON THE GENERATION CURRENT IN SILICON P-N JUNCTIONS UNDER REVERSE BIAS
- Author
- CALZOLARI PU; GRAFFI S
FAC. ING., UNIV. BOLOGNA, ITALY - Source
- SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 9; PP. 1003-1011; BIBL. 8 REF.
- Document type
- Serial Issue
- Language
- English
- Keyword (fr)
- JONCTION TENSION POLARISATION TENSION DIRECTE PORTEUR CHARGE GENERATION PORTEUR CHARGE COURANT GENERATION ETUDE THEORIQUE CARACTERISTIQUE FONCTIONNEMENT JONCTION ABRUPTE JONCTION LINEAIRE ELECTROMAGNETISME ELECTRONIQUE
- Keyword (en)
- ELECTROMAGNETISM ELECTRONICS
- Keyword (es)
- ELECTROMAGNETISMO ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7314505221
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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