DRIFT MOBILITY MEASUREMENTS IN THIN EPITAXIAL SEMICONDUCTOR LAYERS USING TIME-OF-FLIGHT TECHNIQUES.
- Author
- EVANS AGR; ROBSON PN
DEP. NAT. PHILOS., STRATHCLYDE UNIV., GLASGOW, SCOTL. - Source
- SOLID. STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 8; PP. 805-812; BIBL. 9 REF.
- Document type
- Article
- Language
- English
- Keyword (fr)
- COUCHE MINCE MATERIAU SEMICONDUCTEUR METHODE TEMPS VOL COUCHE EPITAXIQUE MOBILITE ELECTRON VITESSE DERIVE HYPERFREQUENCE MESURE ARSENIURE COMPOSE GALLIUM METHODE MESURE ARSENIURE GALLIUM ELECTROMAGNETISME ELECTRONIQUE
- Keyword (en)
- ELECTROMAGNETISM ELECTRONICS
- Keyword (es)
- ELECTROMAGNETISMO ELECTRONICA
- Classification
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- PASCAL7530023337
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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